David Angell
IBM
21 Papers
381 Citations
David Angell is an academic researcher from IBM. The author has contributed to research in topics: Reactive-ion etching & Etching (microfabrication). The author has an hindex of 11, co-authored 21 publications.
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Papers
Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology
Basanth Jagannathan,Marwan H. Khater,Francois Pagette,Jae-Sung Rieh,David Angell,H. Chen,John E. Florkey,F. Golan,David R. Greenberg,R.A. Groves,S.-J. Jeng,J. Johnson,E. Mengistu,Kathryn T. Schonenberg,C.M. Schnabel,Peter Andrew Smith,Andreas D. Stricker,David C. Ahlgren,Gregory G. Freeman,Kenneth J. Stein,S. Subbanna +20 more
TL;DR: In this paper, a SiGe NPN HBT with unity gain cutoff frequency (f/sub T/) of 207 GHz and an f/sub MAX/ extrapolated from Mason's unilateral gain of 285 GHz was reported.
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SiGe HBTs with cut-off frequency of 350 GHz
Jae-Sung Rieh,Basanth Jagannathan,H. Chen,Kathryn T. Schonenberg,David Angell,Anil K. Chinthakindi,John E. Florkey,F. Golan,David R. Greenberg,S.-J. Jeng,Marwan H. Khater,Francois Pagette,Christopher M. Schnabel,Peter Andrew Smith,Andreas D. Stricker,K. Vaed,Richard P. Volant,David C. Ahlgren,Gregory G. Freeman,K. Stein,Seshadri Subbanna +20 more
- 08 Dec 2002
TL;DR: In this paper, the SiGe HBTs with f/sub T/ of 350 GHz were reported, which is the highest reported f/Sub T/ for any Si-based transistor as well as any bipolar transistor.
218
Patent
Micro electromechanical switch having self-aligned spacers
Richard P. Volant,David Angell,Donald F. Canaperi,Joseph T. Kocis,Kevin S. Petrarca,Kenneth J. Stein,William C. Wille +6 more
- 19 Jun 2003
TL;DR: In this article, a method of fabricating and the structure of a micro-electromechanical switch (MEMS) provided with self-aligned spacers or bumps is described, and the spacers are designed to have an optimum size and to be positioned such that they act as a detent mechanism for the switch to minimize problems caused by stiction.
103
Patent
Monitoring and controlling plasma processes via optical emission using principal component analysis
David Angell,Paul B. Chou,Antonio Rogelio Lee,Martin C. Sturzenbecker +3 more
- 27 Nov 1995
TL;DR: In this article, a method of monitoring the status of plasma in a chamber using real-time spectral data while conducting an etch process during the course of manufacturing of semiconductor wafers is presented.
101
Patent
End-point detection
David Angell,Carl J. Radens +1 more
- 01 Feb 1993
TL;DR: In this paper, a wavelength of light is monitored for end-point detection during etching, which characterizes variation of light emitted by discharge produced during the etching process, at least one principal component of the data is calculated, each principal component has variables, each variable has a weight, and each variable corresponds to a wavelength.
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