Danielle Vanhaeren
IMEC
16 Papers
53 Citations
Danielle Vanhaeren is an academic researcher from IMEC. The author has contributed to research in topics: Spreading resistance profiling & Dopant. The author has an hindex of 9, co-authored 16 publications.
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Papers
Hafnium oxide films by atomic layer deposition for high- κ gate dielectric applications: Analysis of the density of nanometer-thin films
Riikka L. Puurunen,Annelies Delabie,Sven Van Elshocht,Matty Caymax,Martin L. Green,Bert Brijs,Olivier Richard,Hugo Bender,Thierry Conard,Ilse Hoflijk,Wilfried Vandervorst,David Hellin,Danielle Vanhaeren,Chao Zhao,Stefan De Gendt,Marc Heyns +15 more
TL;DR: In this article, the density of hafnium oxide films grown by atomic layer deposition for high-κ gate dielectric applications was investigated for films with thickness in the nanometer range.
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Mesoscopic physical removal of material using sliding nano-diamond contacts
Umberto Celano,Feng Chun Hsia,Feng Chun Hsia,Danielle Vanhaeren,Kristof Paredis,Torbjörn E. M. Nordling,Josephus Gerardus Buijnsters,Thomas Hantschel,Wilfried Vandervorst,Wilfried Vandervorst +9 more
TL;DR: Nanosized sliding contacts made of diamond in the regime whereby thousands of nm3 are removed are studied and a controllable removal rate below 5 nm/scan for all the materials is demonstrated, thus opening to future development of 3D tomographic AFM.
Active dopant characterization methodology for germanium
Trudo Clarysse,Pierre Eyben,Tom Janssens,Ilse Hoflijk,Danielle Vanhaeren,Alessandra Satta,Marc Meuris,Wilfried Vandervorst,Janusz Bogdanowicz,G. Raskin +9 more
TL;DR: In this article, the authors present the significantly different behavior of germanium calibration curves (versus silicon) and the shape and characteristics of the probe imprints (Ge is softer than Si) and differences in raw data behavior.
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Bulk Properties of MOCVD-Deposited HfO2 Layers for High k Dielectric Applications
Sven Van Elshocht,Mikhail R. Baklanov,Bert Brijs,Richard Carter,Matty Caymax,L. Carbonell,Martine Claes,Thierry Conard,Vincent Cosnier,L. Date,Stefan De Gendt,Jon Kluth,D. Pique,Olivier Richard,Danielle Vanhaeren,Guy Vereecke,Thomas Witters,Chao Zhao,Marc Heyns +18 more
TL;DR: The physical bulk properties of metalorganic chemical vapor deposited (MOCVD) deposited HfO 2 layers were characterized as a function of deposition temperature and starting surface as mentioned in this paper, and it was shown that the density of the film is heavily dependent on the thickness, where very thin layers have a density that is only a fraction of the bulk density regardless of the deposition temperature.
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•Proceedings Article
1mA/um-I ON strained SiGe 45% -IFQW pFETs with raised and embedded S/D
Jerome Mitard,Liesbeth Witters,Geert Hellings,Raymond Krom,Jacopo Franco,Geert Eneman,Andriy Hikavyy,Benjamin Vincent,Roger Loo,Paola Favia,Harold Dekkers,E. Altamirano Sanchez,A. Vanderheyden,Danielle Vanhaeren,Pierre Eyben,Shinji Takeoka,S. Yamaguchi,M.J.H. van Dal,Wei-E Wang,S.-H Hong,Wilfried Vandervorst,K. De Meyer,Serge Biesemans,Philippe Absil,Naoto Horiguchi,T. Y. Hoffmann +25 more
- 14 Jun 2011
TL;DR: A 2nd generation of Implant Free Quantum Well pFETs is presented, leading to an excellent short channel control and logic performance (1mA/um-ION @-1V).
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