Daniel McCarthy
United States Naval Research Laboratory
6 Papers
23 Citations
Daniel McCarthy is an academic researcher from United States Naval Research Laboratory. The author has contributed to research in topics: Reactive-ion etching & Tungsten. The author has an hindex of 2, co-authored 6 publications.
Chat about Author
Papers
Application of Electroless Nickel−Boron Films for High-Selectivity Pattern Transfer Processes
David I. Ma,Loretta M. Shirey,Daniel McCarthy,Alan Thompson,Syed B. Qadri,Walter J. Dressick,Mu-San Chen,Jeffrey M. Calvert,Ravi Kapur,Susan L. Brandow +9 more
TL;DR: In this article, the effect of the Pd(II) precursor on feature resolution, Ni plating rate, and etch resistance was examined by real-time endpoint detection using laser reflectometry.
20
Double-crystal X-ray topography characterization of an electrical-bias-induced stress variation in metal-oxide-semiconductor field effect transistors
TL;DR: In this paper, a comparison of the electrical-field-induced stress and mechanically induced stress was made, on the basis of which the amount of biasinduced stress was measured, which indicated that a weak piezoelectric effect exists in the superficial layers of metal-oxide-semiconductor (MOS) devices.
4
Position measurement of high-energy e-beams for pattern placement improvement
F. Keith Perkins,Daniel McCarthy,Christie R. K. Marrian,Martin C. Peckerar +3 more
- 27 May 1996
TL;DR: In this article, a reverse biased Schottky diode was used to enhance pattern placement accuracy of high-performance e-beam tools in the patterning of membrane masks, which can be used to improve electron scattering models.
3
Reactive-ion etching of tungsten for high-resolution x-ray masks
Loretta M. Shirey,Kelly W. Foster,William Chu,John Kosakowski,K. W. Rhee,E. A. Dobisz,Charles R. Eddy,Doe Park,I. Peter Isaacson,Daniel McCarthy,Christie R. K. Marrian,Martin C. Peckerar +11 more
- 13 May 1994
TL;DR: In this article, a process for etching fine features in tungsten (100 nm linewidth or less) to produce patterned absorbers has been developed, where a chrome etch mask is first defined in a e-beam lithography and s then transferred into the tengsten by reactive-ion-etching.
1
Lateral Extension of Dislocations in NMOS IC
TL;DR: Dislocations extending through channel regions of NMOSFETs with submicron gate lengths have been observed and arrays of dislocations in the field regions of ICs have also been observed.