Daniel Martin
Virginia Tech
17 Papers
129 Citations
Daniel Martin is an academic researcher from Virginia Tech. The author has contributed to research in topics: Power module & Inverter. The author has an hindex of 9, co-authored 17 publications.
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Papers
A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices
Bret Whitaker,Adam Barkley,Zach Cole,Brandon Passmore,Daniel Martin,Ty McNutt,Alexander B. Lostetter,Jae Seung Lee,Koji Shiozaki +8 more
TL;DR: In this article, an isolated on-board vehicular battery charger that utilizes silicon carbide (SiC) power devices to achieve high density and high efficiency for application in electric vehicles (EVs) and plug-in hybrid EVs (PHEVs).
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Design of Parallel Inverters for Smooth Mode Transfer Microgrid Applications
TL;DR: In this paper, a smooth mode transfer and accurate current sharing are performed in a multi-inverter-based microgrid system by the designed system level controls with control area network communication.
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Design of a 250 kW, 1200 V SiC MOSFET-based three-phase inverter by considering a subsystem level design optimization approach
Ajith Wijenayake,Kraig Olejniczak,David Simco,Stephen Minden,Matthew Feurtado,Brandon Passmore,Ty McNutt,Alex Lostetter,Daniel Martin +8 more
- 01 Oct 2017
TL;DR: In this article, an approach based on a subsystem optimization approach is presented wherein the power module, the DC and AC bus structures, DC link capacitor bank, and the gate driver controls are discussed for a 16 kg, 250 kW all-SiC three-phase inverter.
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State-space modeling, analysis, and implementation of paralleled inverters for microgrid applications
Chien-Liang Chen,Jih-Sheng Lai,Daniel Martin,Yuang-Shung Lee +3 more
- 18 Mar 2010
TL;DR: In this article, the state-space model and implementation results of a power conditioning system are presented and the Eigenvalues with different controller gains and load conditions for grid-tie mode and standalone mode are utilized to analyze the system stability.
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Dynamic Characterization of Next Generation Medium Voltage (3.3 kV, 10 kV) Silicon Carbide Power Modules
Jonathan Hayes,William Austin Curbow,Brett Sparkman,Daniel Martin,Kraig Olejniczak,Ajith Wijenayake,Ty McNutt +6 more
- 16 May 2017
TL;DR: This paper introduces the dynamic analysis of Wolfspeed's new high-performance 3.3 kV and 10 kV all-SiC power modules based on 3rd generation SiC MOSFET technology, applicable to a variety of different medium voltage applications.
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