Daniel Andler
Dresden University of Technology
8 Papers
124 Citations
Daniel Andler is an academic researcher from Dresden University of Technology. The author has contributed to research in topics: Power semiconductor device & Voltage source. The author has an hindex of 7, co-authored 8 publications. Previous affiliations of Daniel Andler include Valparaiso University & Federico Santa María Technical University.
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Papers
A Predictive Control Scheme for Current-Source Rectifiers
TL;DR: In this article, a simple predictive control scheme for a CSR is presented, where the main achievements of the control scheme are the simplicity in controlling the dc-link current and the generation of currents with unity displacement power factor.
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Switching Loss Analysis of 4.5-kV–5.5-kA IGCTs Within a 3L-ANPC Phase Leg Prototype
TL;DR: In this paper, the authors presented the characterization of a 4.5-kV-5.5kA integrated gate-commutated thyristor (IGCT) within a 3L-ANPC phase leg.
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Experimental Investigation of the Commutations of a 3L-ANPC Phase Leg Using 4.5-kV–5.5-kA IGCTs
TL;DR: All 32 ANPC commutations can be applied in a new medium-voltage converter realization and do not present critical operating conditions for the power semiconductors or the converters.
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Switching loss analysis of modulation methods used in neutral point clamped converters
Daniel Andler,Samir Kouro,Marcelo A. Perez,Jose Rodriguez,Bin Wu +4 more
- 28 Dec 2009
TL;DR: In this paper, a switching loss estimation method for neutral point clamped (NPC) multilevel converters is presented based on experimental measurements of the power semiconductors together with a linearized switching model of the converter.
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New junction temperature balancing method for a three level active NPC converter
Daniel Andler,Erika Hauk,Rodrigo Alvarez,Jens Weber,Steffen Bernet,Jose Rodriguez +5 more
- 15 Sep 2011
TL;DR: In this paper, a new temperature balancing method for the 3L-ANPC-VSC is introduced, which is implemented in Matlab and compared with the 3-L-NPC VSC using experimental data of 4.5kV Press-pack IGBT and Diode for the calculation of the losses.
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