Hollow cubic ZnSnO3 with abundant oxygen vacancies for H2S gas sensing.

Two-dimensional (2D) transition metal dichalcogenide (TMDC) heterostructure is a new age strategy to achieve high electrocatalytic activity and ion storage capacity. The less complex and cost-effective applicability of the large-area TMDC heterostructure (HS) for energy applications require more research. Herein, we report the MoSe2@WSe2 nanohybrid HS electrocatalyst prepared using liquid exfoliated nanocrystals, followed by direct electrophoretic deposition (EPD). The improved catalytic activity is attributed to the exposure of catalytic active sites on the edge of nanocrystals after liquid exfoliation and the synergistic effect arises at HS interfaces between the MoSe2 and WSe2 nanocrystals. As predicted, the HS catalyst achieves a lower overpotential of 158 mV, a smaller Tafel slope of 46 mV dec-1 for a current density of 10 mA cm-2, and is stable for a long time. The flexible symmetric supercapacitor (FSSC) based on the HS catalyst demonstrates the excellent specific capacitance (Csp) of 401 F g-1 at 1 A g-1, 97.20% capacitance retention after 5000 cycles and high flexible stability over 1000 bending cycles. This work presents a less complex and solution-processed efficient catalyst for future electrochemical energy applications.

Synergistic 2D MoSe2@WSe2 nanohybrid heterostructure toward superior hydrogen evolution and flexible supercapacitor.

Flexible photodetectors functionalized by transition metal dichalcogenides have attracted great attention due to their excellent photo-harvesting efficiency. However, the field of optoelectronics still requires advancement in the production of large-area, broad band and flexible photodetectors. Here we report a flexible, stable, broad band and fast photodetector based on a MoS2/WSe2heterostructure on ordinary photocopy paper with pencil-drawn graphite electrodes. Ultrathin MoS2/WSe2nanohybrids have been synthesized by an ultrahigh yield liquid-phase exfoliation technique. The thin sheets of WSe2, and MoS2contain two to four layers with a highly c-oriented crystalline structure. Subsequently, the photodetector was exploited under ultra-broad spectral range from 400 to 780 nm. The photodetector exhibits excellent figure of merit such as on/off ratio of the order of 103, photoresponsivity of 124 mA W-1and external quantum efficiency of 23.1%. Encouragingly, rise/decay time of about 0.1/0.3 s was realized, which is better than in previous reports on paper-based devices.

MoS2/WSe2 Nanohybrids for flexible paper-based photodetectors.

Bi2S3 nanorods decorated on bentonite nanocomposite for enhanced visible-light-driven photocatalytic performance towards degradation of organic dyes

DFT study of Cu-modified and Cu-embedded WSe2 monolayers for cohesive adsorption of NO2, SO2, CO2, and H2S

Effect of surface oxidation on nonlinear optical absorption in WS2 nanosheets

Electrophoretic deposition of ZnSnO3/MoS2 heterojunction photoanode with improved photoelectric response by low recombination rate

Enhanced Nonlinear Saturable Absorption from Type III van der Waals Heterostructure Bi2S3/MoS2 by Interlayer Electron Transition

Enhanced energy storage density of antiferroelectric AgNbO3-based ceramics by Bi/Ta modification at A/B sites

The invention discloses a preparation method of a Bi2S3-HfS2 Van der Waals heterojunction thin film. The preparation method comprises the following steps that 1, a first combustion tube is prepared, HfCl4 powder is taken and placed in the downstream direction of the center of a second temperature zone, sulfur powder is taken and placed in the upstream direction of the center of the second temperature zone, and a substrate is taken and placed at the center of a first temperature zone; 2, after the first combustion tube is sealed and subjected to vacuum treatment, inert gas and reducing gas areintroduced into the first combustion tube through a gas inlet, all temperature zones of the first combustion tube are heated, and an HfS2 thin film is prepared; 3, a second combustion tube is prepared, Bi2O3 powder is taken and placed in the center of a third temperature zone, sulfur powder is taken and placed in the upstream direction of the center of a fourth temperature zone, and the HfS2 thinfilm prepared in the step 2 serves as a new substrate to be placed in the downstream direction of the center of the third temperature zone; and 4, after the second combustion tube is sealed and subjected to vacuum treatment, and inert gas is introduced into the second combustion tube, all the temperature zones of the first combustion tube are heated to obtain the Bi2S3-HfS2 Van der Waals heterojunction thin film.

Preparation device and method of Bi2S3-HfS2 Van der Waals heterojunction thin film

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