다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

Electrons and Phonons

Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to ∼ 1,000 cm(2) V(-1) s(-1) obtained for a thickness of ∼ 10 nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.

http://absimage.aps.org/image/MAR14/MWS_MAR14-2013-005031.pdf

Black Phosphorus Field-effect Transistors

Recently the developments in the field of II-VI-oxides have been spectacular. Various epitaxial methods has been used to grow epitaxial ZnO layers. Not only epilayers but also sufficiently good-quality multiple quantum wells (MQWs) have also been grown by laser molecular-beam epitaxy (laser-MBE). We discuss mainly the experimental aspect of the optical properties of excitons in ZnO-based MQW heterostructures. Systematic temperature-dependent studies of optical absorption and photoluminescence in these MQWs were used to evaluate the well-width dependence and the composition dependence of the major excitonic properties. Based on these data, the localization of excitons, the influence of exciton-phonon interaction, and quantum-confined Stark effects are discussed. 
The optical spectra of dense excitonic systems are shown to be determined mainly by the interaction process between excitons and biexcitons. The high-density excitonic effects play a role for the observation of room-temperature stimulated emission in the ZnO MQWs. The binding energies of exciton and biexciton are enhanced from the bulk values, as a result of quantum-confinement effects.

Optical Properties of Excitons in ZnO-based Quantum Well Heterostructures

Tuning electronic structure and optical properties of ZnO monolayer by Cd doping

Al-doped ZnO has attracted much attention as a transparent electrode. The graphene-like ZnO monolayer as a two-dimensional nanostructure material shows exceptional properties compared to bulk ZnO. Here, through first-principle calculations, we found that the transparency in the visible light region of Al-doped ZnO monolayer is significantly enhanced compared to the bulk counterpart. In particular, the 12.5 at% Al-doped ZnO monolayer exhibits the highest visible transmittance of above 99%. Further, the electrical conductivity of the ZnO monolayer is enhanced as a result of Al doping, which also occurred in the bulk system. Our results suggest that Al-doped ZnO monolayer is a promising transparent conducting electrode for nanoscale optoelectronic device applications.

Al-Doped ZnO Monolayer as a Promising Transparent Electrode Material: A First-Principles Study.

Transparent anodes are indispensable components for optoelectronic devices. Two-dimensional (2D) materials are attracting increasing research interest due to their unique properties and promising applications. In order to design novel transparent anodes, we investigated the electronic, optical, and electrical properties of 2D ZnO monolayers doped with Al, Ga, and In using the first-principles calculation in combination with the Boltzmann transport theory. When the doping concentration of Al, Ga, and In is less than 12.5 wt %, we find that the average transmittance reaches up to 99% in the visible and UV regions. Moreover, the electrical conductivity is enhanced for the Al, Ga, and In doped systems compared to that of the pristine ZnO monolayer. In particular, a good electrical conductivity with a significant improvement for the In doped ZnO monolayer is achieved compared to Al and Ga doping at the 6.25 wt % level. These results suggest that the ZnO monolayer based materials, and in particular the In doped ZnO monolayer, are promising transparent anodes for nanoscale electronic and optoelectronic applications.

Comparative Study on ZnO Monolayer Doped with Al, Ga and In Atoms as Transparent Electrodes

Nd-doped ZnO monolayer: High Curie temperature and large magnetic moment

The effect of Be doping on the electronic structure and optical properties of ZnO monolayer has been studied by first-principles density functional theory. The calculated negative formation energy of Be-doped ZnO monolayer suggests Be doping is feasible. Moreover, it is found that Be doping results in increasing of band gap of ZnO monolayer. Compared with pristine ZnO monolayer, imaginary parts of dielectric function of Be-doped ZnO monolayer move toward higher energy and the blue-shift of optical absorption edge is observed. Such modulation of the band gaps and optical properties provides Be-doped ZnO monolayer with promising application in ultraviolet photoelectronic device.

First-principles calculations of electronic structure and optical properties of Be-doped ZnO monolayer

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