Dan Denninghoff
University of California, Santa Barbara
8 Papers
59 Citations
Dan Denninghoff is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & Field-effect transistor. The author has an hindex of 7, co-authored 8 publications.
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Papers
N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒ max
Dan Denninghoff,Jing Lu,Matthew A. Laurent,E. Ahmadi,Sarah L. Keller,Umesh K. Mishra +5 more
- 18 Jun 2012
TL;DR: In this paper, the authors used a tall-stem T-gate on an N-polar GaN/InAlN MIS-HEMT grown by MOCVD.
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Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition
Tetsuya Fujiwara,Tetsuya Fujiwara,Ramya Yeluri,Dan Denninghoff,Jing Lu,Stacia Keller,James S. Speck,Steven P. DenBaars,Umesh K. Mishra +8 more
TL;DR: In this paper, an enhancement-mode m-plane AlGaN/GaN heterojunction field effect transistors were fabricated with an Al2O3 gate dielectric deposited by atomic layer deposition (ALD).
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Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors
Jing Lu,Xun Zheng,Matthew Guidry,Dan Denninghoff,E. Ahmadi,Shalini Lal,Stacia Keller,Steven P. DenBaars,Umesh K. Mishra +8 more
TL;DR: In this article, the back-barrier design in N-polar GaN/(In, Al, Ga)N was engineered to achieve highly conductive-channels with tch < 5nm using metal organic chemical vapor deposition.
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N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz f T and 405 GHz f max
Dan Denninghoff,Jing Lu,E. Ahmadi,Sarah L. Keller,Umesh K. Mishra +4 more
- 23 Jun 2013
TL;DR: In this paper, the authors reported 1.89 S/mm extrinsic transconductance, 4 A/mm drain current density, and 0.23 Ω-mm on-resistance on depletion-mode nitrogen-polar GaN MIS-HEMTs with a 5.4-nm GaN channel and a novel InAlN/AlGaN back barrier grown by MOCVD on a vicinal sapphire substrate.
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•Journal Article
Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al
Tetsuya Fujiwara,Ramya Yeluri,Dan Denninghoff,Jing Lu,Stacia Keller,James S. Speck,Steven P. DenBaars,Umesh K. Mishra +7 more
TL;DR: In this paper, an enhancement-mode m-plane AlGaN/GaN heterojunction field effect transistors were fabricated with an Al2O3 gate dielectric deposited by atomic layer deposition (ALD).
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