Perovskite solar cells combine high carrier mobilities with long carrier lifetimes and high radiative efficiencies. Despite this, full devices suffer from significant nonradiative recombination losses, limiting their VOC to values well below the Shockley–Queisser limit. Here, recent advances in understanding nonradiative recombination in perovskite solar cells from picoseconds to steady state are presented, with an emphasis on the interfaces between the perovskite absorber and the charge transport layers. Quantification of the quasi‐Fermi level splitting in perovskite films with and without attached transport layers allows to identify the origin of nonradiative recombination, and to explain the VOC of operational devices. These measurements prove that in state‐of‐the‐art solar cells, nonradiative recombination at the interfaces between the perovskite and the transport layers is more important than processes in the bulk or at grain boundaries. Optical pump‐probe techniques give complementary access to the interfacial recombination pathways and provide quantitative information on transfer rates and recombination velocities. Promising optimization strategies are also highlighted, in particular in view of the role of energy level alignment and the importance of surface passivation. Recent record perovskite solar cells with low nonradiative losses are presented where interfacial recombination is effectively overcome—paving the way to the thermodynamic efficiency limit.

/pdf/nonradiative-recombination-in-perovskite-solar-cells-the-4v3h4orkal.pdf

Nonradiative Recombination in Perovskite Solar Cells: The Role of Interfaces

Lead-free tin-halide perovskite solar cells with 13% efficiency

DFG, 423749265, SPP 2196: Identifizierung und Unterdruckung von Grenzflachenrekombination fur hocheffiziente Perowskit-Solarzellen

/pdf/on-the-origin-of-the-ideality-factor-in-perovskite-solar-1a4h8h8bjp.pdf

On the Origin of the Ideality Factor in Perovskite Solar Cells

As one kind of promising next-generation photovoltaic devices, perovskite solar cells (PVSCs) have experienced unprecedented rapid growth in device performance over the past few years. However, the practical applications of PVSCs require much improved device long-term stability and performance, and internal defects and external humidity sensitivity are two key limitation need to be overcome. Here, gadolinium fluoride (GdF3 ) is added into perovskite precursor as a redox shuttle and growth-assist; meanwhile, aminobutanol vapor is used for Ostwald ripening in the formation of the perovskite layer. Consequently, a high-quality perovskite film with large grain size and few grain boundaries is obtained, resulting in the reduction of trap state density and carrier recombination. As a result, a power conversion efficiency of 21.21% is achieved with superior stability and negligible hysteresis.

https://onlinelibrary.wiley.com/doi/epdf/10.1002/adma.201904347

Suppressing Vacancy Defects and Grain Boundaries via Ostwald Ripening for High-Performance and Stable Perovskite Solar Cells.

Traditionally, III–V multi-junction cells have been used in concentrator photovoltaic (CPV) applications, which deliver extremely high efficiencies but have failed to compete with ‘flat-plate’ silicon technologies owing to cost. Here, we assess the feasibility of using metal halide perovskites for CPVs, and we evaluate their device performance and stability under concentrated light. Under simulated sunlight, we achieve a peak efficiency of 23.6% under 14 Suns (that is, 14 times the standard solar irradiance), as compared to 21.1% under 1 Sun, and measure 1.26 V open-circuit voltage under 53 Suns, for a material with a bandgap of 1.63 eV. Importantly, our encapsulated devices maintain over 90% of their original efficiency after 150 h aging under 10 Suns at maximum power point. Our work reveals the potential of perovskite CPVs, and may lead to new PV deployment strategies combining perovskites with low-concentration factor and lower-accuracy solar tracking systems. Metal halide perovskites offer the potential for high-efficiency, low-fabrication-cost solar cells. This study now explores their prospects if deployed in concentrator photovoltaics and finds they perform well up to a concentration of 53 Suns and retain good stability under 10 Suns for over 150 h.

/pdf/high-irradiance-performance-of-metal-halide-perovskites-for-2jwdtixc7z.pdf

High irradiance performance of metal halide perovskites for concentrator photovoltaics

The ideality factor of a solar cell, derived from the dependence of its open-circuit voltage ${V}_{\text{OC}}$ on light intensity, has historically been used to identify the dominant mechanism of charge-carrier recombination in a device. Applying this technique to perovskite solar cells (PSCs) is problematic, though, since ${V}_{\text{OC}}$ values change with time, due to the presence of slowly mobile ionic charge in the perovskite layer. Using both transient optoelectronic measurements and drift-diffusion simulations, the authors identify the dominant recombination mechanism in PSCs from the $t\phantom{\rule{0}{0ex}}r\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}s\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}t$ ideality factor, following device preconditioning with a forward bias.

/pdf/identifying-dominant-recombination-mechanisms-in-perovskite-3jcgkijjjg.pdf

Identifying Dominant Recombination Mechanisms in Perovskite Solar Cells by Measuring the Transient Ideality Factor

The ideality factor determined by measuring the open circuit voltage (VOC) as function of light intensity is often used as a means to identify the dominant recombination mechanism in solar cells. However, applying this Suns-VOC technique to perovskite cells is problematic since the VOC evolves with time in a way which depends on the previously applied bias (Vpre), the light intensity, and the device architecture/processing. Here we show that the dominant recombination mechanism in two structurally similar CH3NH3PbI3 devices containing either mesoporous Al2O3 or TiO2 layers can be identified from the signature of the transient ideality factor following application of a forward bias, Vpre, to the device in the dark. The transient ideality factor, is measured by monitoring the temporal evolution of VOC at different light intensities. The initial values of the transient ideality were consistent with corresponding photoluminescence vs intensity as well as electroluminescence vs current density measurements. Time-dependent simulations of the measurement on modelled devices, which include the effects of mobile ionic charge, show that Shockley Read Hall (SRH) recombination through deep traps at the charge collection interfaces is dominant in both devices. Using transient photovoltage measurements superimposed on the evolving VOC of bifacial devices we further show that the charge collection interface extends throughout the mesoporous TiO2 layer, consistent with a transient ideality signature corresponding to SRH recombination in the bulk of the film. This information could not be inferred from an ideality factor determined from only steady-state VOC values. The method we have developed will be useful for identifying performance bottlenecks in new variants of perovskite devices by comparison with the transient ideality signatures we have predicted for a range of possible recombination schemes.

Identifying dominant recombination mechanisms in perovskite solar cells by measuring the transient ideality factor

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Identifying Dominant Recombination Mechanisms in Perovskite Solar Cells by Measuring the Transient Ideality Factor

Identifying dominant recombination mechanisms in perovskite solar cells by measuring the transient ideality factor