Two-dimensional (2D) materials exhibit many interesting properties, but most 2D materials are exfoliated from layered bulk materials, limiting the development of the 2D material group. Recently, non-layered 2D materials have aroused great attention due to their excellent catalysis performance, favored compatibility with silicon substrates and high chemical activity. With high photoconductivity, high responsivity and fast response time, non-layered selenium (Se) exhibits important applications in the field of optoelectronics. In this work, we use a simple liquid phase exfoliation method to fabricate 2D Se nanoflakes from bulk Se which possesses a unique chain structure. The thickness of 2D Se nanoflakes was measured to be in the range of 5-10 nm. As-fabricated Se nanoflakes were used in a photodetector by the photoelectrochemical method, showing a high photocurrent density (1.28 μA cm-2) and photoresponsivity (10.45 μA W-1). In addition, the long-term photoelectric measurements indicate that the 2D Se-based photodetector has good time and cycle stability. Our results show that 2D Se has promising potential in liquid-based photo-detectors.

https://iopscience.iop.org/article/10.1088/1361-6528/aafc0f/pdf

Two-dimensional non-layered selenium nanoflakes: facile fabrications and applications for self-powered photo-detector.

We report on a new approach to quickly synthesize high-quality single crystalline wide band gap silicon carbide (SiC) films for development of high-performance deep ultraviolet (UV) photodetectors. The fabricated SiC based UV photodetectors exhibited high response while maintaining cost-effectiveness and size miniaturization. Focus of the experiments was on studies of electrical and electronic properties, as well as responsivity, response and recovery times, and repeatability of the deep UV photodetectors. Raman scattering spectroscopy and scanning electron microscope (SEM) were used to characterize the SiC materials. Analyses of the SEM data indicated that highly flat SiC thin films have been obtained. Based on the synthesized SiC, deep UV detectors are designed, fabricated, and tested with various UV wavelength lights at different radiation intensities. Temperature effect and bias effect on the photocurrent strength and signal-to-noise ratio, humidity effect on the response time and recovery time of the fabricated detectors have been carefully characterized and discussed. The detectors appear to have a very stable baseline and repeatability. The obtained responsivity is more than 40% higher compared to commercial detectors. The good performance of the photodetectors at operating temperature up to 300 °C remains nearly unchanged.

A new approach for fabrications of SiC based photodetectors

We extend our work on the use of digitally controlled pulsed laser plasma deposition (PLPD) technique to synthesize high quality, 2-dimensional single crystalline boron nitride nanosheets (BNNSs) at a low substrate temperature for applications in high-performance deep UV photodetectors. The obtained sample consists of a large amount of BNNSs partially overlapping one another with random orientations. Each sheet is composed of a few (from 2 to 10) stacked atomic layers exhibiting high transparency due to its highly ordered hBN crystallinity. Deep UV detectors based on the obtained BNNSs were designed, fabricated, and tested. The bias and temperature effects on the photocurrent strength and the signal-to-noise ratio have been carefully characterized and discussed. A significant shift in the cut off wavelength of the BNNSs based photodetectors was observed suggesting a band gap reduction as a result of the BNNSs’ collective structure. The newly designed photodetector presented exceptional properties: a high sensitivity to weak intensities of radiation in both UVC and UVB range while remaining visible-blind, and a high signal-to-noise ratio operation even at temperatures as high as 400 °C. In addition, the BNNSs based photodetector exhibited potential for self-powered operation.

/pdf/high-operating-temperature-and-low-power-consumption-boron-2c99ybtsad.pdf

High Operating Temperature and Low Power Consumption Boron Nitride Nanosheets Based Broadband UV Photodetector

Control of hydrophobic surface and wetting states in ultra-flat ZnO films by GLAD method

Optoelectronic and photocatalytic properties of zinc sulfide nanowires synthesized by vapor-liquid-solid process

A plasma-enhanced chemical vapor deposition system was used to fabricate ultraviolet (UV) photodetectors based on polar and nonpolar zinc oxide (ZnO) thin films combined with interdigitated platinum top electrodes. The performance of photodetectors was demonstrated by current–voltage characteristics and time-dependent photoresponse measurements. Both polar and nonpolar detectors showed a prominent photocurrent gain under UV light illumination, compared with dark conditions. However, the response and recovery times for the nonpolar detectors were significantly faster compared to the polar detectors. These variations in response and recovery times can be explained by the dipole effect between the electrode and sensing thin film, which is due to the adsorption and desorption of gas molecules on polar and nonpolar ZnO thin film surfaces.

Enhanced UV photodetector response and recovery times using a nonpolar ZnO sensing layer

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Enhanced UV photodetector response and recovery times using a nonpolar ZnO sensing layer