The relentless drive toward high-speed and high-density silicon-based integrated circuits (ICs) has necessitated significant advances in processing technology. The entrance of copper metallization in IC manufacturing has resulted in new challenges in metal-insulator-metal (MIM) capacitor fabrication, one of the key building blocks in analog/mixed signal/RFCMOS circuits. The requirement to reduce passive chip space has led to active researches for MIM with high dielectric constant (/spl kappa/) film. This paper provides an overview of MIM capacitor integration issues with the transition from AlCu backend of line (BEOL) to Cu BEOL. The key to MIM capacitor electrical properties can be achieved with optimized dielectrics. The different MIM capacitor architectures published are also described. Special emphasis is made on the properties of various MIM with high-/spl kappa/ dielectrics in the last section.

MIM capacitor integration for mixed-signal/RF applications

It is demonstrated that the voltage coefficients of capacitance (VCC) in high-/spl kappa/ metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-/spl kappa/ and SiO/sub 2/ dielectrics. A MIM capacitor with capacitance density of 6 fF/spl mu/m/sup 2/ and quadratic VCC of only 14 ppm/V/sup 2/ has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm /spl deg/C) as well as low leakage current of less than 10 nA/cm/sup 2/ up to 4 V at 125 /spl deg/C.

Improvement of voltage linearity in high-/spl kappa/ MIM capacitors using HfO/sub 2/-SiO/sub 2/ stacked dielectric

High-performance metal-insulator-metal capacitors using atomic layer-deposited HfO/sub 2/-Al/sub 2/O/sub 3/ laminate are fabricated and characterized for RF and mixed-signal applications. The laminate capacitor can offer high capacitance density (12.8 fF//spl mu/m/sup 2/) up to 20 GHz, low leakage current of 4.9/spl times/10/sup -8/ A/cm/sup 2/ at 2 V and 125/spl deg/C, and small linear voltage coefficient of capacitance of 211 ppm/V at 1 MHz, which can easily satisfy RF capacitor requirements for year 2007 according to the International Technology Roadmap for Semiconductors. In addition, effects of constant voltage stress and temperature on leakage current and voltage linearity are comprehensively investigated, and dependences of quadratic voltage coefficient of capacitance (/spl alpha/) on frequency and thickness are also demonstrated. Meanwhile, the underlying mechanisms are also discussed.

https://ir.nctu.edu.tw:443/bitstream/11536/26700/1/000221660100009.pdf

RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications

A very high density of 23 fF//spl mu/m/sup 2/ has been measured in RF metal-insulator-metal (MIM) capacitors which use high-/spl kappa/ TaTiO as the dielectric. In addition, the devices show a small reduction of 1.8% in the capacitance, from 100 kHz to 10 GHz. Together with these characteristics the MIM capacitors show low leakage currents and a small voltage-dependence of capacitance at 1 GHz. These TaTiO MIM capacitors should be useful for precision RF circuits.

https://ir.nctu.edu.tw:443/bitstream/11536/13216/1/000232208700010.pdf

Very high-density (23 fF//spl mu/m/sup 2/) RF MIM capacitors using high-/spl kappa/ TaTiO as the dielectric

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.

https://ir.nctu.edu.tw:443/bitstream/11536/27357/1/000187845800003.pdf

High-performance MIM capacitor using ALD high-k HfO 2 -Al 2 O 3 laminate dielectrics

In this paper, we report high-k MiM capacitors including Ta/sub 2/O/sub 5/, TaO/sub x/N/sub y/, HfO/sub 2/, Al/sub 2/O/sub 3/ and Ta/sub 2/O/sub 5//Al/sub 2/O/sub 3/ stack layer integrated in 0.13 /spl mu/m 8-level Cu-metallization technology using Cu barrier as both top and bottom electrodes. Ta/sub 2/O/sub 5/ exhibits excellent voltage and temperature linearity of capacitance. Al/sub 2/O/sub 3/ shows low leakage, but poor voltage and temperature linearity. Voltage linearity could be significantly affected by high-k deposition temperature. We present high-k MiM capacitors with voltage linearity as low as 25 ppm/V and 13 ppm/V/sup 2/.

Characterization and comparison of high-k metal-insulator-metal (MiM) capacitors in 0.13 /spl mu/m Cu BEOL for mixed-mode and RF applications

Relaxor property plays a key role in determining energy storage performance of dielectric capacitor. The usual method to improve relaxor property is to form substitutional solid solution. Here an unusually substitutional and interstitial hybrid perovskite solid solution 0.8(Ba0.85Ca0.15Zr0.1Ti0.9O3)‐0.2ZnO (BCZT:Zn) is designed, where one Zn2+ occupies B‐site and two Zn2+ share one A‐site of perovskite structure, and fabricated its epitaxial thin films. Compared to BCZT films, BCZT:Zn films have increased c/a ratio which leads to enhanced maximum polarization Pmax, wide band gap therefore high electrical breakdown strength EBDS, and enhanced relaxor degree thus suppressed remanent polarization Pr. As the results, dramatically improve energy storage property with the recoverable energy storage density Wrec of 75.9 J cm−3 and the energy storage efficiency η of 76.7% are obtained in BCZT:Zn films. This work not only provides a high performance relaxor ferroelectric material, but also impacts some new thinking to optimize die/ferro/piezoelectric properties by forming hybrid solid solutions.

High Energy Storage Performance in Ba0.85Ca0.15Zr0.1Ti0.9O3‐ZnO Hybrid Perovskite Solid Solution Thin Films

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Characterization and comparison of high-k metal-insulator-metal (MiM) capacitors in 0.13 /spl mu/m Cu BEOL for mixed-mode and RF applications

High Energy Storage Performance in Ba0.85Ca0.15Zr0.1Ti0.9O3‐ZnO Hybrid Perovskite Solid Solution Thin Films