D. Werho
Motorola
19 Papers
254 Citations
D. Werho is an academic researcher from Motorola. The author has contributed to research in topics: Wafer & Synchrotron radiation. The author has an hindex of 10, co-authored 19 publications. Previous affiliations of D. Werho include Freescale Semiconductor.
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Papers
Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO2
Dina H. Triyoso,Ran Liu,D. Roan,M. Ramon,N. V. Edwards,Rich Gregory,D. Werho,J. Kulik,G. Tam,E. Irwin,X.-D. Wang,L.B. La,C. Hobbs,R. Garcia,J. Baker,B. E. White,Philip J. Tobin +16 more
TL;DR: In this paper, material and electrical characterization of ALD hafnium oxide and the correlations between the results were reported. And the results indicated that deposition temperature controlled both the material and the electrical properties.
161
Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition
Dina H. Triyoso,Rama I. Hegde,Stefan Zollner,M. Ramon,S. Kalpat,Rich Gregory,Xiang-Dong Wang,J. Jiang,Mark Raymond,R. Rai,D. Werho,D. Roan,Bruce E. White,Philip J. Tobin +13 more
TL;DR: In this article, the impact of 8-to-45-at.% Ti on physical and electrical characteristics of atomic-layerdeposited and annealed hafnium dioxide was studied using vacuum-ultraviolet spectroscopic ellipsometry, secondary ion mass spectroscopy, transmission electron microscopy, atomic force microscopy and x-ray diffraction, Rutherford backscattering spectroscope.
81
Application of synchrotron radiation to TXRF analysis of metal contamination on silicon wafer surfaces
TL;DR: The current best detection limit achieved at the Stanford Synchrotron Radiation Laboratory (SSRL) for Ni is 8×10 7 atoms/cm 2 which is a factor of 50 better than what can be achieved using laboratory-based sources as mentioned in this paper.
62
Patent
Non-contaminating wafer polishing slurry
Paul W. Deal,D. Werho +1 more
- 24 Apr 1991
TL;DR: A semiconductor wafer polishing slurry that does not contaminate a wafer processing area utilizes an aqueous organic base to suspend the slurry's fine abrasive particles.
29
Atomic layer deposited TaCy metal gates: Impact on microstructure, electrical properties, and work function on HfO2 high-k dielectrics
TL;DR: In this article, a novel TaCy process by atomic layer deposition (ALD) is described, and detailed physical properties of TaCy films are studied using ellipsometry, a four-point probe, Rutherford backscattering spectrometry (RBS), x-ray photoelectron spectroscopy (XPS), and X-ray diffraction (XRD).
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