D. Wagner
Applied Materials
12 Papers
169 Citations
D. Wagner is an academic researcher from Applied Materials. The author has contributed to research in topics: Ion implantation & Ion beam. The author has an hindex of 5, co-authored 12 publications.
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Papers
Patent
Apparatus for and methods of implanting desired chemical species in semiconductor substrates
D. Wagner,Ii Michael T Wauk,Matthew Castle,Babak Adibi +3 more
- 20 May 1998
TL;DR: In this article, the authors propose an apparatus and method for implanting a desired chemical species in a semiconductor substrate, which consists of a target chamber, a holder to hold a substrate in the target chamber for implantation, a pump to pump the target vessel down to a desired pressure, a pressure lock to enable a substrate to be passed into the target channel for loading on the holder while the target volume is at sub-atmospheric pressure, an ion beam generator for generating and directing a beam of ions containing said desired species at a surface of a substrate on said holder
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Patent
Method of determining dose uniformity of a scanning ion implanter
D. Wagner,Biagio Gallo,Peter Kindersley,David Eugene Aberle,Jonathon Yancey Simmons +4 more
- 23 Jul 2004
TL;DR: In this article, the authors determined the dose uniformity of a scanning ion implanter by measuring the base beam current at a time when the measurement should be unaffected by outgassing from a substrate being implanted and then calculated a base dose distribution map.
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Junction profiles of sub keV ion implantation for deep sub-quarter micron devices
Amir Al-Bayati,S. Tandon,R. Doherty,Adrian Murrell,D. Wagner,Majeed A. Foad,Babak Adibi,R. Mickevicius,V. Menisilenko,S. Simeonov,A. Jian,D. Sing,C. Ferguson,R. Murto,L. Larson +14 more
- 17 Sep 2000
TL;DR: The effect of energy contamination on device performance such as L/sub eff/, VT and I/sub DSAT/ is simulated using ISE TCAD and the level of contamination is measured for sub keV B implants in the Quantum Leap.
Defect engineering of p+-junctions by multiple-species ion implantation
Michael I. Current,Michael I. Current,M. Inoue,S. Nakashima,N. Ohno,M. Kuribara,Y. Matsunaga,Tohru Hara,D. Wagner,S. Leung,Babak Adibi,G. Lecouras,L. Larson,S. Prussin +13 more
- 02 Apr 1993
TL;DR: In this paper, the authors investigated the diffusion effects and residual defect levels of compound implants using Si and F pre-implants with BF2 doping implants and optical scanning and depth profiling techniques (TW, PAD, Raman).
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Exploring the limits of pre-amorphization implants on controlling channeling and diffusion of low energy B implants and ultra shallow junction formation
Amir Al-Bayati,S. Tandon,Abhilash J. Mayur,Majeed A. Foad,D. Wagner,R. Murto,D. Sing,C. Ferguson,L. Larson +8 more
- 17 Sep 2000
TL;DR: In this article, the authors explored the limits and optimized conditions of Ge PAI prior to low energy B implants for the formation of junctions for deep sub-quarter micron devices.
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