D. V. Andreev
Bauman Moscow State Technical University
22 Papers
50 Citations
D. V. Andreev is an academic researcher from Bauman Moscow State Technical University. The author has contributed to research in topics: Gate dielectric & Dielectric. The author has an hindex of 4, co-authored 22 publications.
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Papers
Method of stress and measurement modes for research of thin dielectric films of MIS structures
V. V. Andreev,Vladimir M. Maslovsky,D. V. Andreev,A. A. Stolyarov +3 more
- 30 Dec 2016
TL;DR: In this article, the authors proposed a new method of stress and measurement modes for research of thin dielectric films of MIS structures, which realized injection of the most part of charge into gate dielectrics in one of stress modes: either current owing through dielectors is constant or voltage applied to gate is constant.
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Modification of thin oxide films of MOS structure by high-field injection and irradiation
D. V. Andreev,G G Bondarenko,V. V. Andreev,A. A. Stolyarov +3 more
- 23 Feb 2016
TL;DR: In this article, the authors investigated processes of modification and changing of the charge state of MOS structures having a multilayer gate dielectric based on a thermal SiO2 film doped with phosphorus under conditions of different modes of high-field electron injection and an electron irradiation.
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Charge Effects in the Dielectric Films of MIS Structures under the Concurrent Influence of Radiation and High-Field Electron Injection
TL;DR: In this article, a model for the processes of a variation in the charge state of MIS (metal-insulator-semiconductor) structures under the concurrent influence of high-field tunneling electron injection and radiation is developed.
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