This paper describes a 128 times 128 pixel CMOS vision sensor. Each pixel independently and in continuous time quantizes local relative intensity changes to generate spike events. These events appear at the output of the sensor as an asynchronous stream of digital pixel addresses. These address-events signify scene reflectance change and have sub-millisecond timing precision. The output data rate depends on the dynamic content of the scene and is typically orders of magnitude lower than those of conventional frame-based imagers. By combining an active continuous-time front-end logarithmic photoreceptor with a self-timed switched-capacitor differencing circuit, the sensor achieves an array mismatch of 2.1% in relative intensity event threshold and a pixel bandwidth of 3 kHz under 1 klux scene illumination. Dynamic range is > 120 dB and chip power consumption is 23 mW. Event latency shows weak light dependency with a minimum of 15 mus at > 1 klux pixel illumination. The sensor is built in a 0.35 mum 4M2P process. It has 40times40 mum2 pixels with 9.4% fill factor. By providing high pixel bandwidth, wide dynamic range, and precisely timed sparse digital output, this silicon retina provides an attractive combination of characteristics for low-latency dynamic vision under uncontrolled illumination with low post-processing requirements.

/pdf/a-128-times-128-120-db-15-mu-s-latency-asynchronous-temporal-3bv4hgi11i.pdf

A 128 $\times$ 128 120 dB 15 $\mu$ s Latency Asynchronous Temporal Contrast Vision Sensor

http://eia.udg.es/%7Eqsalvi/papers/2006-MJ.pdf

Review of CMOS image sensors

Total ionizing dose radiation effects on the electrical properties of metal-oxide-semiconductor devices and integrated circuits are complex in nature and have changed much during decades of device evolution. These effects are caused by radiation-induced charge buildup in oxide and interfacial regions. This paper presents an overview of these radiation-induced effects, their dependencies, and the many different approaches to their mitigation.

Radiation effects and hardening of MOS technology: devices and circuits

A review of radiation-induced displacement damage effects in semiconductor devices is presented, with emphasis placed on silicon technology. The history of displacement damage studies is summarized, and damage production mechanisms are discussed. Properties of defect clusters and isolated defects are addressed. Displacement damage effects in materials and devices are considered, including effects produced in silicon particle detectors, visible imaging arrays, and solar cells. Additional topics examined include NIEL scaling, carrier concentration changes, random telegraph signals, radiation hardness assurance, and simulation methods for displacement damage. Areas needing further study are noted.

Displacement Damage Effects in Irradiated Semiconductor Devices

Advances in CMOS image sensors enable high-speed image readout, which makes it possible to capture multiple images within a normal exposure time. Earlier work has demonstrated the use of this capability to enhance sensor dynamic range. This paper presents an algorithm for synthesizing a high dynamic range, motion blur free, still image from multiple captures. The algorithm consists of two main procedures, photocurrent estimation and saturation and motion detection. Estimation is used to reduce read noise, and, thus, to enhance dynamic range at the low illumination end. Saturation detection is used to enhance dynamic range at the high illumination end as previously proposed, while motion blur detection ensures that the estimation is not corrupted by motion. Motion blur detection also makes it possible to extend exposure time and to capture more images, which can be used to further enhance dynamic range at the low illumination end. Our algorithm operates completely locally; each pixel's final value is computed using only its captured values, and recursively, requiring the storage of only a constant number of values per pixel independent of the number of images captured. Simulation and experimental results demonstrate the enhanced signal-to-noise ratio (SNR), dynamic range, and the motion blur prevention achieved using the algorithm.

http://isl.stanford.edu/~abbas/group/papers_and_pub/chiaotcas.pdf

Synthesis of high dynamic range motion blur free image from multiple captures

A 512/spl times/512 CMOS active pixel sensor (APS) was designed and fabricated in a standard 0.5-/spl mu/m technology. The radiation tolerance of the sensor has been evaluated with Co-60 and proton irradiation with proton energies ranging from 11.7 to 59 MeV. The most pronounced radiation effect is the increase of the dark current. However, the total ionizing dose-induced dark current increase is orders of magnitude smaller than in standard devices. It behaves logarithmically with dose and anneals at room temperature. The dark current increase due to proton displacement damage is explained in terms of the nonionizing energy loss of the protons. The fixed pattern noise does not increase with total ionizing dose. Responsivity changes are observed after Co-60 and proton irradiation, but a definitive cause has not yet been established.

Total dose and displacement damage effects in a radiation-hardened CMOS APS

This paper discusses a 13.89 million pixels CMOS image sensor with the same size as a 36x24 mm 2 film negative. The pitch of the 3-transistor active pixel is 8 microns. The sensor has a full well charge of 65,000 electrons and 35 electrons temporal noise, and a dynamic range of 65 dB. This Sensor can be used in a variety of applications. Especially for machine vision, the resolution, the simple operation of the device and the compatibility of 35 mm optics make it an attractive device. The paper will also address more in detail some advantages of this sensor for vision and inspection applications.

A 35 mm 13.89 Million Pixel CMOS Active Pixel Image Sensor

CMOS image sensors with logarithmic response are attractive devices for applications where a high dynamic range is required. Their strong point is the high dynamic range. Their weak point is the sensitivity to pixel parameter variations introduced during fabrication. This gives rise to a considerable fixed pattern noise (FPN) that deteriorates the image quality unless pixel calibration is used. In the present work a technique to remove the FPN by employing on-chip calibration is introduced, where the effect of threshold voltage variations in pixels is cancelled. An image sensor based on an active pixel structure with five transistors has been designed, fabricated, and tested. The sensor consists of 525/spl times/525 pixels measuring 7.5 /spl mu/m/spl times/10 /spl mu/m, and is fabricated in a 0.5-/spl mu/m CMOS process. The measured dynamic range is 120 dB while the FPN is 2.5% of the output signal range.

A logarithmic response CMOS image sensor with on-chip calibration

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Papers

Total dose and displacement damage effects in a radiation-hardened CMOS APS

A 35 mm 13.89 Million Pixel CMOS Active Pixel Image Sensor

A logarithmic response CMOS image sensor with on-chip calibration