D. Taylor
University of Nottingham
43 Papers
255 Citations
D. Taylor is an academic researcher from University of Nottingham. The author has contributed to research in topics: Deep-level transient spectroscopy & Quantum well. The author has an hindex of 12, co-authored 43 publications. Previous affiliations of D. Taylor include University of Natal.
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Papers
Interface induced uniaxial magnetic anisotropy in amorphous CoFeB films on AlGaAs(001).
A. T. Hindmarch,Christian J. Kinane,Maureen MacKenzie,J. N. Chapman,Mohamed Henini,D. Taylor,Dario Arena,J. Dvorak,B. J. Hickey,Christopher H. Marrows +9 more
TL;DR: An isolated magnetic interface anisotropy in amorphous CoFeB films on (Al)GaAs(001) is demonstrated, and it is postulated that the spin-orbit interaction in the semiconductor is crucial in determining the magnetic an isotropy.
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Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes
Walid Filali,Nouredine Sengouga,Slimane Oussalah,R. H. Mari,Dler Jameel,Noor Al Saqri,Mohsin Aziz,D. Taylor,Mohamed Henini +8 more
TL;DR: In this article, the authors used the Cheung method to extract the Schottky diodes parameters from the MQW properties of the Ti/Au/n-Al 0.33Ga0.67As/nGaAs/NAl0.33G 0.67G
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Electrical properties of nitrogen‐related defects in n‐type GaAsN grown by molecular‐beam epitaxy
TL;DR: In this paper, the number of electron traps in each sample detected by the DLTS measurements is found to be dependent on the nitrogen contents, and new shallow traps with energies ranging from 0.036 to 0.13 eV have been detected in samples with nitrogen content in the range 0.2% to 1.4%.
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Investigation of defects in indium doped TiO2 thin films using electrical and optical techniques
Noor Al Saqri,Noor Al Saqri,Aniruddha Mondal,Jorlandio F. Felix,Yara Galvão Gobato,Vanessa Orsi Gordo,Hind Albalawi,Dler Jameel,Dler Jameel,Haifa Alghamdi,Faisal S. Al mashary,D. Taylor,Mahmmoud S. Abd El-sadek,Mohamed Henini +13 more
TL;DR: In this paper, the defect levels into the band gap of titanium oxide (TiO2) due to indium doping was investigated by Deep level transition spectroscopy (DLTS), Raman Spectroscopy and photoluminescence (PL).
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Modeling the effect of deep traps on the capacitance-voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates
Nouredine Sengouga,Rami Boumaraf,R. H. Mari,Afak Meftah,Dler Jameel,Noor Al Saqri,Mohsin Azziz,D. Taylor,Mohamed Henini +8 more
TL;DR: In this article, a numerical simulation was carried out to explain experimentally observed effects of different types of deep levels on the capacitance-voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates.
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