D. T. Tran
University of Southampton
14 Papers
11 Citations
D. T. Tran is an academic researcher from University of Southampton. The author has contributed to research in topics: Photonics & Silicon on insulator. The author has an hindex of 3, co-authored 9 publications.
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Papers
Ultra-sharp asymmetric Fano-like resonance spectrum on Si photonic platform
Han Du,Weiwei Zhang,Callum G. Littlejohns,Stevan Stankovic,Xingzhao Yan,D. T. Tran,Graham J. Sharp,Frederic Y. Gardes,David J. Thomson,Marc Sorel,Goran Z. Mashanovich,Graham T. Reed +11 more
TL;DR: Pronounced asymmetric resonances with slopes up to 0.77 dB/pm have been successfully measured, which, to the best of the authors' knowledge, is higher than the results reported in state-of-the-art devices in on-chip integrated Si photonic studies.
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Silicon-on-insulator free-carrier injection modulators for the mid-infrared.
Milos Nedeljkovic,Callum G. Littlejohns,Ali Z. Khokhar,Mehdi Banakar,Wei Cao,J. Soler Penades,D. T. Tran,Frederic Y. Gardes,David J. Thomson,Graham T. Reed,Hong Wang,Goran Z. Mashanovich +11 more
TL;DR: Experimental demonstrations of silicon-on-insulator waveguide-based free-carrier effect modulators operating at 3.8 μm are presented, demonstrating modulation at data rates up to 125 Mbit/s.
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Buried 3D spot-size converters for silicon photonics
Weiwei Zhang,Martin Ebert,Jamie D. Reynolds,Bigeng Chen,Xingzhao Yan,Han Du,Mehdi Banakar,D. T. Tran,Callum G. Littlejohns,Graham T. Reed,David J. Thomson +10 more
- 20 Aug 2021
TL;DR: In this paper, an efficient spot-size converter (SSC) for low-loss optical mode transition between large and small waveguides based upon a buried three-dimensional (3D) taper is demonstrated.
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Integration of low loss vertical slot waveguides on SOI photonic platforms for high efficiency carrier accumulation modulators.
Weiwei Zhang,Martin Ebert,Bigeng Chen,Jamie D. Reynolds,Xingzhao Yan,Han Du,Mehdi Banakar,D. T. Tran,Kapil Debnath,Callum G. Littlejohns,Shinichi Saito,David J. Thomson +11 more
TL;DR: These fabricated slot waveguide with dielectric thermal SiO2 layer thicknesses have been characterized under transmission electron microscopy allowing for strong carrier accumulation effects for MOS-capacitor electro-optic modulators.
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Study into the spread of heat from thermo-optic silicon photonic elements
Bharat Pant,Weiwei Zhang,Martin Ebert,Xingzhao Yan,Han Du,Mehdi Banakar,D. T. Tran,Yanli Qi,David Rowe,V. Jeyaselvan,Callum G. Littlejohns,Graham T. Reed,David J. Thomson +12 more
TL;DR: In this article, the authors studied how close waveguides can be placed together without significant thermal crosstalk from adjacent devices without significant heat dissipation. But, the authors did not consider the effect of the dissipation of the heat produced to drive the waveguide to the surrounding silicon.
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