3 – Electron-beam lithography machines

Fundamentals of Electron and X-Ray Lithography

A phase-based alignment technique for scanning electron-beam lithography is proposed and evaluated. The approach uses a grid alignment mark rotated with respect to the beam deflection axes and requires only a single, one-dimensional (1D) line scan to perform subpixel registration in both the x and y directions. This 1D, phase-based method promises subpixel alignment without interpolation, faster mark signal acquisition, and more computationally efficient detection. Theoretical limits for alignment accuracy and a simple phase-estimation algorithm that approaches these limits are described. Monte Carlo simulations indicate that nanometer-level registration precision can be achieved with modest grid periods and signal to noise ratios (SNRs). Experimental measurements of registration variance as a function of SNR agree well with both theory and simulation. Registration errors of 3 nm (1-standard deviation) are observed using a 1μm grid period, 49 nm pixel size, and the highest observed SNR of 5.9.

Subpixel alignment for scanning-beam lithography using one-dimensional, phase-based mark detection

Technologies for electron beam direct writing

4 – Device fabrication by electron-beam lithography

The described automatic alignment procedure permits an alignment of two successive exposure levels of better than ±50 nm in a deflection field of 600 μm at a beam current of 5×10−10 A within an average time of 3 s even without using a laser interferometer controlled stage.

High‐precision automatic alignment procedure for vector scan e‐beam lithography

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High‐precision automatic alignment procedure for vector scan e‐beam lithography