The correlation between atomic bonding sites and the electronic structure of SiO on GaAs(001)-c(2×8)∕(2×4) was investigated using scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and density functional theory (DFT). At low coverage, STM images reveal that SiO molecules bond Si end down; this is consistent with Si being undercoordinated and O being fully coordinated in molecular SiO. At ∼5% ML (monolayer) coverage, multiple bonding geometries were observed. To confirm the site assignments from STM images, DFT calculations were used to estimate the total adsorption energies of the different bonding geometries as a function of SiO coverage. STS measurements indicated that SiO pins the Fermi level midgap at ∼5% ML coverage. DFT calculations reveal that the direct causes of Fermi level pinning at the SiO GaAs(001)-(2×4) interface are a result of either local charge buildups or the generation of partially filled dangling bonds on Si atoms.

/pdf/direct-and-indirect-causes-of-fermi-level-pinning-at-the-sio-4y3626z2ty.pdf

Direct and indirect causes of Fermi level pinning at the SiO∕GaAs interface

A detailed deep‐level transient spectroscopy study of the characteristics of deep‐level defects introduced by 5.48 MeV alpha particles in low‐doped n‐Si is reported. The deep‐level characteristics studied include emission rate signatures, activation energies, capture cross sections and their temperature dependence, and defect concentrations and their spatial profiles. At least five deep levels in the upper‐half band gap and two levels in the lower‐half gap have been observed as a result of irradiation and characterized in detail. A systematic study of their generation rates up to a dose of about 3×1010 alpha particles/cm2 has been performed providing insights into the dose dependence of their formation mechanisms. Interesting room temperature transformation phenomena have been observed in our deep‐level spectra during room temperature storage of the irradiated samples. Extensive isochronal thermal annealing measurements have been carried out to obtain data on the anneal‐out characteristics of the radiatio...

Characterization of deep levels introduced by alpha radiation in n‐type silicon

Deep levels introduced by 5.48 MeV alpha particles in p‐type silicon have been studied using deep‐level transient spectroscopy. The generation rates of these defects have been obtained up to a dose of 1.2×1011 α particles/cm2. Detailed data have been obtained on the electrical characteristics of the two deep levels in the lower‐half band gap at Ev+0.21 eV and Ev+0.35 eV and one level in the upper‐half gap of silicon at Ec−0.25 eV introduced by irradiation. These characteristics include emission rate signatures, carrier capture cross sections, and their temperature dependence and deep‐level concentrations. Detailed isochronal annealing measurements have been performed to obtain data on the annealing behavior of the deep‐level defects and also to help identify these centers. Some interesting phenomena relating to temporal changes in our deep level spectra stimulated by minority carrier injection have been observed and discussed in the light of the available literature on radiation‐induced defects in silicon.

Study of alpha‐radiation‐induced deep levels in p‐type silicon

Defects created by 3.5 GeV xenon ions in silicon

The evidence of interaction of gold‐related defects with irradiation‐induced defects in silicon is presented. It is observed that the concentrations of both the gold‐related levels increase with increasing dose of irradiation. The linear relation between gold‐related acceptor concentration NAu and the divacancy NV‐V suggests that the gold‐related level is a gold‐divacancy complex rather than gold‐vacancy complex.

Interaction of gold‐related and irradiation‐induced defects in silicon

Electrical properties of deep defects induced in n-silicon by -particles of about 10 MeV energy at a dose of 1014 and 1015 cm-2 are studied by DLTS. The levels at Ec -0.18 eV, Ec -0.26 eV, and Ec -0.48 eV are identified as A center, V2 (=/-) and V2 (-/0) on the basis of activation energy, electron capture cross section, and annealing behavior. Two other irradiation related levels at Ec -0.28 eV and Ec -0.51 eV could not be related to any known center.

Investigation of Deep Defects Due to α-Particle Irradiation in n-Silicon

Study of n‐GaAs MOS Diodes with Spin‐on SiO2 Layer

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

D. Sengupta

Author Tools

Chat about Author

Papers

Investigation of Deep Defects Due to α-Particle Irradiation in n-Silicon

Study of n‐GaAs MOS Diodes with Spin‐on SiO2 Layer