The surface-emitting laser (SEL) is considered one of the most important devices for optical interconnects and LANs, enabling ultra parallel information transmission in lightwave and computer systems. We introduce its history, fabrication technology, and discuss the advantages. Then, we review the progress of the surface emitting laser and the vertical-cavity surface-emitting laser (VCSEL), covering the spectral band from infrared to ultraviolet by featuring its physics, materials, fabrication technology, and performances, such as threshold, output powers, polarizations, line-width, modulation, reliability, and so on.

Surface-emitting laser-its birth and generation of new optoelectronics field

A vertical-cavity surface emitting laser (VCSEL) was invented 30 years ago. A lot of unique features can be expected, such as low-power consumption, wafer-level testing, small packaging capability, and so on. The market of VCSELs has been growing up rapidly in recent years, and they are now key devices in local area networks using multimode optical fibers. Also, long wavelength VCSELs are currently attracting much interest for use in single-mode fiber metropolitan area and wide area network applications. In addition, a VCSEL-based disruptive technology enables various consumer applications such as a laser mouse and laser printers. In this paper, the recent advance of VCSEL photonics will be reviewed, which include the wavelength extension of single-mode VCSELs and their wavelength integration/control. Also, this paper explores the potential and challenges for new functions of VCSELs toward optical signal processing

https://cnst.nctu.edu.tw/mbe08/abstract/6-13.30-14.00-koyama.pdf

Recent Advances of VCSEL Photonics

Research to realize long-wavelength, GaInNAs quantum well lasers has been intense in the past three years. The results have been very promising considering the relative immaturity and challenges of this new materials system. This paper reviews both the materials challenges and progress in growth of the metastable GaInNAs alloys required to reach the 1.3–1.55 μm communication wavelengths and the challenges and progress in device design for both vertical-cavity surface-emitting lasers and higher power edge-emitting lasers.

https://iopscience.iop.org/article/10.1088/0268-1242/17/8/317/pdf

GaInNAs long-wavelength lasers: progress and challenges

InGaAsN:Sb/GaAs quantum wells (QWs) were grown by solid-source molecular beam epitaxy using a N2 radio-frequency plasma source. Photoluminescence reveals an enhancement in the optical properties of InGaAsN/GaAs QWs by the introduction of Sb flux during growth. X-ray diffraction and reflection high-energy electron diffraction analyses indicate that Sb acts as a surfactant. This technique was used to improve the performance of long-wavelength InGaAsN laser diodes. A low-threshold current density of 520 A/cm2 was achieved for an InGaAsN:Sb/GaAs single quantum well 1.2 μm laser diode at room temperature under pulsed operation.

Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers

A brief review on the present knowledge of the electronic properties of the Ga(In)NAs ternary and quaternary alloys is given mainly from an experimental perspective. The discussion is focused on Ga(In)NAs with low N composition (< 10 %), where a large amount of experimental work has been done. Important fundamental electronic properties of the material system are analyzed with the emphasis on the nature of the giant band gap bowing in the alloy and nitrogen-induced modifications of the electronic structure of the conduction band. The current knowledge of the key material parameters, relevant for the device applications, such as electron effective mass, recombination processes and band alignment in Ga(In)NAs/GaAs heterostructures, is also reviewed.

/pdf/electronic-properties-of-ga-in-nas-alloys-4u4hxqn7tn.pdf

Electronic Properties of Ga(In)NAs Alloys

We report on the lasing characteristics of low-threshold long-wavelength GaInNAs double quantum well (DQW) lasers grown by metalorganic chemical vapor deposition (MOCVD). We have achieved a threshold current density of 450 A/cm2 for a 1.28-µm-emitting laser. This is the lowest value for 1.3-µm-range GaInNAs lasers grown by MOCVD. We also observed high characteristic temperatures (T0) of 210 K and 130 K for 1.25 µm and 1.28 µm lasers, respectively. In addition, we investigated the gradual change in lasing characteristics under pulsed operation. The blue shift of an emission wavelength and a threshold current reduction were observed, which is similar to that observed in the thermal annealing of GaInNAs.

Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition

Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics

Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers

The potential use of highly strained GaInAs/GaAs quantum well lasers in high capacity singlemode fibre datalinks is discussed. Heatsink-free CW operation of 1.2 µm GaInAs/GaAs ridge waveguide lasers is demonstrated, with a characteristic temperature T0 of 140 K. The lasing wavelength was > 1.25 µm, which is the longest wavelength reported so far for GaInAs/GaAs systems. A preliminary experiment using 12 µm lasers for singlemode fibre data transmission is also performed.

1.2 [micro sign]m highly strained GaInAs/GaAs quantum well lasers for singlemode fibre datalink

Excellent lasing properties and temperature characteristic of a highly strained 1.17-/spl mu/m GaInAs-GaAs double-quantum-well laser are reported. We show that a strained buffer layer, which is employed in the device, has no tradeoff on the device performance. For a 1500-/spl mu/m-long laser with cleaved facets a threshold current density of 200 A/cm/sup 2/ is achieved. A transparency current density of 180 A/cm/sup 2/ is estimated for as cleaved devices. A record high characteristic temperature in this wavelength range of 150 K is achieved.

1.17-μm highly strained GaInAs-GaAs quantum-well laser

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