D. Sabbagh
Delft University of Technology
18 Papers
84 Citations
D. Sabbagh is an academic researcher from Delft University of Technology. The author has contributed to research in topics: Quantum well & Semiconductor. The author has an hindex of 11, co-authored 18 publications. Previous affiliations of D. Sabbagh include Kavli Institute of Nanoscience & Roma Tre University.
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Papers
Gate-controlled quantum dots and superconductivity in planar germanium
N.W. Hendrickx,David P. Franke,Amir Sammak,M. Kouwenhoven,D. Sabbagh,L. A. Yeoh,R. Li,M. L. V. Tagliaferri,Michele Virgilio,Giovanni Capellini,Giordano Scappucci,Menno Veldhorst +11 more
TL;DR: In this paper, the authors integrate gate-defined quantum dots and superconductivity into germanium heterostructures and demonstrate electric gate-control of the supercurrent in a quantum well.
Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology
Amir Sammak,D. Sabbagh,N.W. Hendrickx,Mario Lodari,Brian Paquelet Wuetz,Alberto Tosato,LaReine Yeoh,Monica Bollani,Michele Virgilio,Markus Andreas Schubert,Peter Zaumseil,Giovanni Capellini,Menno Veldhorst,Giordano Scappucci +13 more
TL;DR: In this paper, a 2D hole gas of high mobility (5 × 105 cm2 V−1 s−1) is demonstrated in a very shallow strained germanium (Ge) channel, which is located only 22 nm below the surface.
Gate-controlled quantum dots and superconductivity in planar germanium
N.W. Hendrickx,David P. Franke,Amir Sammak,M. Kouwenhoven,D. Sabbagh,L. A. Yeoh,R. Li,M. L. V. Tagliaferri,Michele Virgilio,Giovanni Capellini,Giordano Scappucci,Menno Veldhorst +11 more
TL;DR: Germanium has great promise for fast and coherent quantum hardware and, being compatible with standard manufacturing, could become a leading material for quantum information processing.
Quantum Transport Properties of Industrial Si 28 / Si O 2 28
D. Sabbagh,Nicole K. Thomas,Jessica M. Torres,R. Pillarisetty,Payam Amin,Hubert C. George,Singh Kanwaljit,A. Budrevich,M. Robinson,D. Merrill,L. Ross,Jeanette M. Roberts,Lester Lampert,L. Massa,S.V. Amitonov,J.M. Boter,G. Droulers,H. G. J. Eenink,M. van Hezel,D. Donelson,Menno Veldhorst,Lieven M. K. Vandersypen,James S. Clarke,Giordano Scappucci +23 more
TL;DR: The structural and quantum transport properties of isotopically enriched Si28/SiO228 stacks deposited on 300mm Si wafers in an industrial CMOS fab were investigated in this article.
Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology
Amir Sammak,D. Sabbagh,N.W. Hendrickx,Mario Lodari,B. Paquelet Wuetz,LaReine Yeoh,Monica Bollani,Michele Virgilio,Markus Andreas Schubert,Peter Zaumseil,Giovanni Capellini,Menno Veldhorst,Giordano Scappucci +12 more
TL;DR: In this article, a two-dimensional hole gas of high mobility was demonstrated in a very shallow strained germanium channel, which is located only 22 nm below the surface, leading to mean free paths.
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