D. Lee
Yonsei University
8 Papers
54 Citations
D. Lee is an academic researcher from Yonsei University. The author has contributed to research in topics: Oxide & Servo. The author has an hindex of 5, co-authored 8 publications.
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Papers
Improvement of dynamic characteristics for optical pickup actuator using sensitivity analysis
TL;DR: In this article, the vibration modes affecting the bandwidth of actuators are shifted to high frequency range and suppressed by modifying the FE model which is used to analyze the motion of the actuator.
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Robust design of a novel three-axis fine stage for precision positioning in lithography
D. Lee,Kyung-Seop Kim,K. N. Lee,Hye-In Choi,No-Cheol Park,Young-Pil Park,Moon G. Lee +6 more
- 01 Apr 2010
TL;DR: In this paper, a three-axis stage is proposed as a fine stage of a dual stage for the precision positioning system for semiconductor lithography requires a robust structural design to obtain enough control bandwidth and an efficient actuator with fast access time.
14
The redistribution of oxygen at AlOx∕CoFe interface of magnetic tunnel junctions through thermal treatment
D. Lee,Jongill Hong +1 more
TL;DR: In this paper, the authors examined the chemical structures of the AlOx∕Co90Fe10 interface and found that thermal treatment affects the redistribution of oxygen at the interface and that this leads to an increase in the tunneling barrier height of magnetic tunnel junctions.
12
Effect of Thermal Treatment on AIO x /Co 90 Fe 10 Interface of Magnetic Tunnel Junctions Prepared by Radical Oxidation
D. Lee,Jang-Sik In,Jongill Hong +2 more
TL;DR: In this paper, the authors confirmed that the improvement in properties of magnetic tunnel junctions prepared by radical oxidation after thermal treatment was mostly due to the redistribution of oxygen at the AlOx/Co(90)Fe_(10) interface.
7
Carrier capture before entering into a semiconductor quantum dot as a dominant pathway for the reduction of emission efficiency
TL;DR: In this paper, the authors measured carrier lifetimes and photoluminescence spectra both at 10 K and at higher temperatures and found that the carriers captured in QDs are robust and are not lost to nearby defects.
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