General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that severe challenges for two-dimensional characterization remain. The ...

Ion beams in silicon processing and characterization

Submicron patterning of 1 in. diameter curved surfaces with a 46 mm radius of curvature has been demonstrated with step and flash imprint lithography (SFIL) using templates patterned by ion beam proximity printing (IBP). Concave and convex spherical quartz templates were coated with 700-nm-thick poly(methylmethacrylate) (PMMA) and patterned by step-and-repeat IBP. The developed resist features were etched into the quartz template and the remaining PMMA stripped. During SFIL, a low viscosity, photopolymerizable formulation containing organosilicon precursors was introduced into the gap between the etched template and a substrate coated with an organic transfer layer and exposed to ultraviolet illumination. The smallest features on the templates were faithfully replicated in the silylated layer.

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Patterning curved surfaces: Template generation by ion beam proximity lithography and relief transfer by step and flash imprint lithography

Although optical lithography has been extended to far smaller dimensions than was predicted 15 years ago, there are definite physical barriers to extending it to the minimum dimensions of 70 nm that are projected to be required 15 years from now. Both focused, point electron beams and ion beams have been used to write dimensions in resist well below 20 nm, albeit at speeds far too slow for production lithography. Projection systems, which employ a mask and, in effect, produce a large array of beams, can provide both small minimum dimensions and high throughput. Ions are particularly well suited for this because they suffer little or no scattering in the resist, the linewidth is not a strong function of dose (good process latitude), and the resist sensitivity is relatively independent to resist thickness or ion energy. IMS in Vienna, Austria has built two generations of ion projection lithography systems which have demonstrated many of the features needed for high throughput lithography. In these systems a...

A review of ion projection lithography

Ion projection lithography (IPL) is an emerging technology and a major candidate for the next-generation lithography (NGL) designed to complement and supplement current optical lithographic techniques for future chip manufacturing. In this Review, the recent developments of IPL technology are examined with an emphasis on its ability to fabricate a wide variety of nanostructures for the semiconductor industry. Following an introduction of the uniqueness and strength of the technology, the basics of ion-source development and ion-target interactions with and without chemical enhancement are presented. The developments in equipment systems, masks, and resists are subsequently studied. The resolution of printed nanostructures and the corresponding throughput of the current system are assessed for NGL. Finally, concluding remarks are presented to summarize the strengths and weaknesses of the current technology and to suggest the scope for future improvement.

Recent developments in nanofabrication using ion projection lithography.

Fabrication and characterization of polymeric microfiltration membranes using aperture array lithography

A reactive ion etching (RIE) system with a magnetic field, mainly parallel to the dark space electric field on the etch electrode, is described. This axial‐field RIE system has been used with a molecular bromine (Br2) plasma to fabricate Si stencil masks for ion beam lithography. Silicon dioxide (SiO2) films were used as masking layers, and the etching process was optimized for smallest silicon wall angle at a constant Si/SiO2 selectivity of 50. The optimized process was used to fabricate 0.75–1.0‐μm‐thick Si masks with sub‐50 nm resolution. Over a thickness of 0.75 μm, change in linewidth was found to be less than 10 nm, corresponding to a wall angle of less than 0.2° or 3 mrad.

Reactive ion etching of silicon stencil masks in the presence of an axial magnetic field

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Reactive ion etching of silicon stencil masks in the presence of an axial magnetic field