D. Kitamaru
Hiroshima University
8 Papers
113 Citations
D. Kitamaru is an academic researcher from Hiroshima University. The author has contributed to research in topics: Threshold voltage & MOSFET. The author has an hindex of 5, co-authored 8 publications.
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Papers
Completely Surface-Potential-Based Compact Model of the Fully Depleted SOI-MOSFET Including Short-Channel Effects
Norio Sadachika,D. Kitamaru,Y. Uetsuji,Dondee Navarro,M. M. Yusoff,T. Ezaki,Hans Jurgen Mattausch,Mitiko Miura-Mattausch +7 more
TL;DR: In this article, a circuit simulation model for the fully depleted SOI-MOSFET based on a complete surface-potential description is presented, where not only the surface potential in the MOS-FET channel, but also the potentials at both surfaces of the buried oxide are solved iteratively.
55
Complete Surface-Potential-Based Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model for Circuit Simulation
TL;DR: In this article, the authors developed a circuit simulation model based on the surafce-potential description for the HiSIM-SOI MOSFET, which reproduces measured I-V characteristics within numerical accuracy, and proved stable circuit convergence.
23
Impurity-profile-based threshold-voltage model of pocket-implanted MOSFETs for circuit simulation
Hiroaki Ueno,D. Kitamaru,K. Morikawa,M. Tanaka,Mitiko Miura-Mattausch,Hans Jurgen Mattausch,S. Kumashiro,T. Yamaguchi,K. Yamashita,N. Nakayama +9 more
TL;DR: In this paper, a threshold voltage (V/sub th/ versus gate-length (L/sub gate/) model was developed for pocket-implant technology, which extracts the threshold condition from the entire mobile charge concentration in the channel with only five additional parameters.
22
Simple nondestructive extraction of the vertical channel-impurity profile of small-size metal–oxide–semiconductor field-effect transistors
Hans Jurgen Mattausch,M. Suetake,D. Kitamaru,Mitiko Miura-Mattausch,S. Kumashiro,Naoyuki Shigyo,Shinji Odanaka,N. Nakayama +7 more
TL;DR: An improved method for extracting the vertical channel-impurity profile [Nsub(x)] of metaloxide-semiconductor field effect transistors (MOSFETs) from measured threshold-voltage dependence on bulk-source voltage is proposed in this paper.
8
Model of Pocket-Implant Mosfets for Circuit Simulation
D. Kitamaru,Hiroaki Ueno,M. Tanaka,M. Miura-Mattausch,K. Morikawa,Hans Jurgen Mattausch,K. Mattausch,S. Kumashiro,T. Yamaguchi,N. Nakayama +9 more
- 01 Jan 2001
TL;DR: In this paper, a threshold voltage (Vth) model was developed for pocket-implant technology, which extracts the threshold condition from the entire mobile charge concentration in the channel with only two parameters; the maximum doping concentration (N su h p ) of the pocket profile and the penetration length (L o ) into the channel.