D. J. Eaglesham
Bell Labs
45 Papers
386 Citations
D. J. Eaglesham is an academic researcher from Bell Labs. The author has contributed to research in topics: Silicon & Epitaxy. The author has an hindex of 15, co-authored 45 publications.
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Papers
Ion beams in silicon processing and characterization
Eric Chason,S. T. Picraux,J. M. Poate,J. O. Borland,Michael I. Current,T. Diaz de la Rubia,D. J. Eaglesham,O. W. Holland,Mark E. Law,Charles W. Magee,James W. Mayer,John Melngailis,Al F. Tasch +12 more
TL;DR: In this paper, the authors review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed.
286
Limited thickness epitaxy in GaAs molecular beam epitaxy near 200 °C
TL;DR: In this article, the low-temperature limit to GaAs molecular beam epitaxy (MBE) was studied at temperatures from 250°C to room temperature, and it was shown that hepi depends strongly on composition, increasing rapidly with Ga/As ratio at fixed temperature.
90
Low‐temperature Si molecular beam epitaxy: Solution to the doping problem
TL;DR: In this article, it is demonstrated that growth at low temperatures yields a solution to this doping problem making thermal, coevaporative doping with excellent control possible in Si MBE without the need for any post-growth annealing.
57
The effect of carbon on diffusion in silicon
TL;DR: In this article, Boron doped Si superlattices, grown by molecular beam epitaxy, were used to detect the injection of excess Si self-interstitials (I) from near-surface 5 × 10 13 cm −2, 40 keV Si implants during annealing.
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