A thermochemical/molecular model is developed for breakdown in high dielectric constant materials and the model suggests that a fundamental relationship exists between dielectric breakdown strength (Ebd) and dielectric constant (k). The model indicates that Ebd should show an approximate (k)−1/2 dependence over a wide range of high dielectric constant materials. The model also predicts that the field-acceleration parameter (γ), from time-dependent dielectric breakdown (TDDB) testing, should increase with dielectric constant. TDDB and Ebd data are presented for model support. The thermochemical model suggests that the very high local electric field (Lorentz-relation/Mossotti-field) in high-k dielectrics tends to distort/weaken the polar molecular bonds making them more susceptible to bond breakage by standard Boltzmann processes and/or by hole capture and thus lowers the breakdown strength.

Thermochemical description of dielectric breakdown in high dielectric constant materials

The ultimate breakdown strength E/sub bd/ of a dielectric material is found to decrease as the dielectric-constant k increases. A thermochemical description of the ultimate breakdown strength of high-k dielectrics suggests that E/sub bd/ should reduce approximately as (k)/sup -1/2/ over a wide range of dielectric materials while the field-acceleration parameter /spl gamma/ should increase in similar but inverse manner. New time-dependent dielectric breakdown (TDDB) data are presented over a wide range of dielectric materials and E/sub bd/ was found to decrease as (k)/sup -0.65/ while /spl gamma/ increases as (k)/sup 0.66/. The good agreement between thermochemical theory and high-k TDDB observations suggests that the very high local electric field (Lorentz-relation/Mossotti-field) in high-k dielectrics tends to distort/weaken the polar molecular bonds making them more susceptible to bond breakage by standard Boltzmann processes and/or by hole-capture and thus lowers the breakdown strength.

Trends in the ultimate breakdown strength of high dielectric-constant materials

Time dependent dielectric breakdown physics – Models revisited

Thin dielectric films are essential components of most micro‐ and nanoelectronic devices, and they have played a key role in the huge development that the semiconductor industry has experienced during the last 50 years. Guaranteeing the reliability of thin dielectric films has become more challenging, in light of strong demand from the market for improved performance in electronic devices. The degradation and breakdown of thin dielectrics under normal device operation has an enormous technological importance and thus it is widely investigated in traditional dielectrics (e.g., SiO2, HfO2, and Al2O3), and it should be further investigated in novel dielectric materials that might be used in future devices (e.g., layered dielectrics). Understanding not only the physical phenomena behind dielectric breakdown but also its statistics is crucial to ensure the reliability of modern and future electronic devices, and it can also be cleverly used for other applications, such as the fabrication of new‐concept resistive switching devices (e.g., nonvolatile memories and electronic synapses). Here, the fundamentals of the dielectric breakdown phenomenon in traditional and future thin dielectrics are revised. The physical phenomena that trigger the onset, structural damage, breakdown statistics, device reliability, technological implications, and perspectives are described.

A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High-k, and Layered Dielectrics

Interest in resistance switching is currently growing apace. The promise of novel high-density, low-power, high-speed nonvolatile memory devices is appealing enough, but beyond that there are exciting future possibilities for applications in hardware acceleration for machine learning and artificial intelligence, and for neuromorphic computing. A very wide range of material systems exhibit resistance switching, a number of which-primarily transition metal oxides-are currently being investigated as complementary metal-oxide-semiconductor (CMOS)-compatible technologies. Here, the case is made for silicon oxide, perhaps the most CMOS-compatible dielectric, yet one that has had comparatively little attention as a resistance-switching material. Herein, a taxonomy of switching mechanisms in silicon oxide is presented, and the current state of the art in modeling, understanding fundamental switching mechanisms, and exciting device applications is summarized. In conclusion, silicon oxide is an excellent choice for resistance-switching technologies, offering a number of compelling advantages over competing material systems.

Silicon Oxide (SiOx ): A Promising Material for Resistance Switching?

Oxide wearout, breakdown, and reliability, D.J. Dumin reliability of flash nonvolatile memories, N. Mielke and J. Chen physics and chemistry of intrinsic time-dependent dielectric breakdown in SiO2 dielectrics, J.W. McPherson breakdown modes and breakdown statistics of ultrathin SiO2 gate oxides, J. Sune et al MOSFET gate oxide reliability - anode hole injection model and its applications, Y.-C. Yeo et al.

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Oxide reliability : a summary of silicon oxide wearout, breakdown, and reliability

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Oxide reliability : a summary of silicon oxide wearout, breakdown, and reliability