X-ray photoelectron spectroscopy has been carried out to characterize the surface of the hafnia $$(\hbox {HfO}_{2})$$
 thin films grown on n-GaAs wafer by atomic layer deposition, and the surface morphology of the $$\hbox {HfO}_{2}$$
 layer on GaAs has been analysed using atomic force microscopy. The barrier height (BH) values of 1.03 and 0.93 eV (300 K) for the Au/Ti/
 $$\hbox {HfO}_{2}$$
 /n-GaAs structures with 3- and 5-nm $$\hbox {HfO}_{2}$$
 interfacial layers, respectively, have been obtained from the I–V characteristics of the devices, which are higher than the value of 0.77 eV (300 K) for the Au/Ti/n-GaAs diode fabricated by us. Therefore, it can be said that the $$\hbox {HfO}_{2}$$
 thin layer at the metal/GaAs interface can also be used for BH modification as a gate insulator in GaAs metal-oxide semiconductor (MOS) capacitors and MOS field-effect transistors. The ideality factor values have been calculated as 1.028 and 2.72 eV at 400 and 60 K; and as 1.04 and 2.58 eV at 400 and 60 K for the metal–insulating layer–semiconductor (MIS) devices with 3- and 5-nm interfacial layers, respectively. The bias-dependent BH values have been calculated for the devices by both Norde’s method and Gaussian distribution (GD) of BHs at each sample temperature. At 320 K, the $$\Phi $$
 $$_\mathrm{b}(V)$$
 value at 0.70 V for a 3-nm MIS diode is about 1.08 eV from the $$\Phi $$
 $$_\mathrm{b}(V)$$
 vs. V curve determined by the GD, and about 0.99 eV at 0.58 V for a 5-nm MIS diode. It has been seen that these bias-dependent BH values are in close agreement with those obtained by Norde’s method for the same bias voltage values.

/pdf/barrier-height-modification-in-au-ti-n-gaas-devices-with-a-57pznbxjix.pdf

Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$ HfO 2 interfacial layer formed by atomic layer deposition

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Silicon-doping influence on the crystalline, surface and optical features of cadmium oxide films deposited by sol-gel spin route