The crystalline structure and interfacial reactions in HfO2 films grown on InP (001) substrates was investigated as a function of film thickness. High resolution transmission electron microscopy and x-ray diffraction measurements were used to investigate changes in the crystalline structure of the HfO2 films. As the thickness of the HfO2 increased, the crystal structure was transformed from monoclinic to tetragonal, and the interfacial layer between the HfO2 film and the InP substrate disappeared. High resolution x-ray photoelectron spectroscopy was also applied to confirm the existence of an interfacial chemical reaction in HfO2/InP. An interfacial self-cleaning effect occurred during the atomic layer deposition process, resulting in a clear interface with no indication of an interfacial layer between the HfO2 film and the InP surface. Finally, the crystallization process in the HfO2 films was found to be significantly affected by the interfacial energy.

Thickness dependence on crystalline structure and interfacial reactions in HfO2 films on InP (001) grown by atomic layer deposition

The rapid development of ultrascaled III–V compound semiconductor devices urges the detailed investigation of metal–semiconductor contacts at nanoscale where crystal orientation, size, and structural phase play dominant roles in device performance. Here, we report the first study on the solid-state reaction between metal (Ni) and ternary III–V semiconductor (In0.53Ga0.47As) nanochannels to reveal the reaction kinetics, formed crystal structure, and interfacial properties. We observe a size-dependent Ni surface diffusion dominant kinetic process that gradually departs to a volume diffusion process as the Fin width increases, as properly depicted with our Fin-specific growth model. The interfacial relationship was found to be Ni4InGaAs2 (0001) ∥ In0.53Ga0.47As (111) with a single Ni4InGaAs2 phase whose [0001] axis exhibit a peculiar rotation away from the nickelide/InGaAs interface due to surface energy minimization. This crystalline interfacial relationship is responsible for introducing a uniaxial height ...

Size and Orientation Effects on the Kinetics and Structure of Nickelide Contacts to InGaAs Fin Structures

Electromodulation of wide-bandgap semiconductors

School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Korea Measurement and Analysis Division, National Nanofab Center (NNFC), Daejeon 305-343, Korea Department of Advanced Materials Science and Engineering, Dankook University, Cheongan 330-714, Korea Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756, Korea

https://www.jstage.jst.go.jp/article/matertrans/52/1/52_M2010324/_pdf

Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO2 Gate Dielectric

Effects of Interface Al2O3 Passivation Layer for High-k HfO2 on GaAs Dong Chan Suh,* Young Dae Cho,* Dae-Hong Ko, Yongshik Lee, Kwun Bum Chung, and Mann-Ho Cho Department of Materials Science and Engineering, Department of Electrical and Electronics Engineering, and Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea Department of Physics, Dankook University, Cheonan 330-714, Korea

http://apel.dongguk.edu/publication/sci/docs/55.pdf

Effects of Interface Al2O3 Passivation Layer for High-k HfO2 on GaAs

The effects of postannealing temperature on the crystal structure and energy band gap (Eg) values of atomic-layer-deposited HfO2 films grown on a GaAs (100) substrate were investigated. In postannealed HfO2 films prepared using a rapid thermal annealing (RTA) process in a N2 ambient at temperatures over 600 °C, the initially produced, partially crystallized HfO2 film changed into a well-ordered crystalline structure with no detectable interfacial layer between the film and the GaAs substrate. In the case of a RTA prepared at 700 °C, the thickness of the film was relatively increased compared to that of an as-grown film. Changes in the depth profile data related to stoichiometry and electronic structure after the annealing treatment indicated that Ga oxide is formed within the HfO2 film during the RTA. The formation of Ga oxide in the film significantly affected the Eg values, i.e., the Eg changed from 5.5 for an as-grown film to 4.7 eV for a film annealed at 700 °C.

Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature

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Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature