The structure, size, and distribution of the secondary defects in high-energy B+ or Al+ implanted 4H-SiC were investigated by cross-sectional transmission electron microscope observations and secondary ion mass spectrometry analyses. Three types of defect structure were detected. The first (type I) is an extrinsic Frank partial dislocation loop parallel to {0001} and is same as that observed in kilo-electron-volt energy B+ or Al+ implanted SiC. The second (type II) is also an extrinsic dislocation loop with an extra Si–C bilayer parallel to {0001} but it has not been previously reported. The last type (type III) has no extra Si–C bilayer. The type of defect is correlated to the size of it. When the size is larger than about 12 nm, the defect becomes type I or type II and the defects which are smaller than about 12 nm are type III. The range of the secondary defect size depends on implanted ions and its dose. The maximum size of defects grows with dopant concentration and that in B+ implanted sample is lar...

Structure and distribution of secondary defects in high energy ion implanted 4H-SiC

The difference of secondary defect formation between high-energy B+ and Al+ implanted layers was investigated by transmission electron microscopy. At the same volume concentration of implanted ions, the density of secondary defects in the Al+ implanted layers is higher than that in the B+ implanted layers and the mean defect size in the B+ implanted layers is larger than that in the Al+ implanted layers. These secondary defects are formed by agglomeration of self-interstitials and the amount of interstitials stored in the defects roughly coincides with that of implanted ions. This correlation does not depend on the ion species. The activation energies of secondary defect formation are not significantly different for B+ and Al+ implanted layers. B+ and Al+ implanted layers have different agglomerations of interstitials, which cause the differences of defect size and density. The difference does not originate from the self-diffusion of interstitials in implanted layers but is probably due to the initial nuc...

Difference of secondary defect formation by high energy B+ and Al+ implantation into 4H–SiC

Epilayers of 6H and 4H–SiC were Al implanted with various doses to form p-type layers after a postimplantation annealing performed at 1700 °C/30 min. Rutherford backscattering spectrometry in the channeling mode analyses carried out before and after annealing show virgin nonimplanted equivalent spectra if the implanted layers are not amorphized. The amorphous layers are recrystallized after annealing with a residual damage level of the lattice relative to the quantity of the dopant implanted. Secondary ion mass spectrometry measurements performed on the implanted samples before and after annealing illustrate a good superposition of the profiles obtained before and after the annealing on nonamorphized samples. Dopant redistribution occurs after annealing, only on amorphized layers, with an intensity that increases with the implanted dose. Deduced from sheet resistance measurements, the dopant activation increases with the implanted dose. Activation of 80%–90% is obtained from capacitance–voltage measuremen...

Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers

The effect of ion-beam annealing for implantation-induced damage in single-crystalline 4H silicon carbide has been studied. Four sets of samples, implanted with two types of ions (C or Si) and two different damage levels (complete or incomplete amorphization), were prepared to investigate the influence of damaging conditions. The damaged samples were irradiated with a 3-MeV Ge ion beam at 600 deg. C in the range of 1x10{sup 15}-2x10{sup 16} cm{sup -2} to induce the ion-beam annealing. Some of the damaged samples were thermally annealed without the Ge irradiation to evaluate pure thermal effects. Rutherford backscattering/channeling for these samples revealed substantial enhancements of damage annealing under the MeV ion-beam irradiation. The enhanced annealing effect was stronger for the incompletely amorphized samples than for the completely amorphized samples. For both cases, the annealing effects almost saturated with increasing ion fluence. The results suggest the competition between the annealing and damaging effects induced by the annealing beam, at least, for the incompletely amorphized samples.

Enhanced annealing of damage in ion-implanted 4H-SiC by MeV ion-beam irradiation

L'objectif du projet VELSIC a ete de demontrer la faisabilite de jonctions p+/n- profondes dans le semiconducteur 4H-SiC, de haute qualite electrique, comprenant une zone p++ realisee par un procede original d'epitaxie localisee a basse temperature (1100 – 1200°C), en configuration VLS (Vapeur - Liquide - Solide). Cette technique innovante de dopage par epitaxie utilise le substrat de SiC mono cristallin comme un germe de croissance sur lequel un empilement enterre de Al - Si est porte a fusion pour constituer un bain liquide, lequel est alimente en carbone par la phase gazeuse. Cette methode se positionne comme une alternative avantageuse a l'implantation ionique, actuellement utilisee par tous les fabricants de composants en SiC, mais qui presente des limitations problematiques encore non resolues a ce jour. Les travaux de these ont explore toutes les facettes du processus complet de fabrication de diodes de test, avec une attention particuliere portee sur l'optimisation de la gravure de cuvettes dans le substrat SiC. Le cœur des travaux a ete concentre sur l'optimisation de l'epitaxie VLS localisee. L'etude a confirme la necessite de limiter la vitesse de croissance vers 1 µm/h pour conserver une bonne cristallinite du materiau epitaxie. Elle a egalement mis en evidence l'action directe du champ electromagnetique radiofrequence sur la phase liquide, conduisant a une tres forte influence du diametre des cuvettes gravees sur l'epaisseur du SiC depose. Un remplissage quasiment complet des cuvettes de 1 µm de profondeur a tres fort dopage p++ a ete demontre. A partir des couches VLS optimisees, des demonstrateurs de types diodes p+/n- ont ete fabriques. Sur les meilleurs echantillons, sans passivation ni protection peripherique, des tensions de seuil en regime direct (entre 2,5 et 3 V) ont, pour la premiere fois, ete mesurees, sans recourir a un recuit haute temperature apres epitaxie. Elles correspondent aux valeurs attendues pour une vraie jonction p-n sur 4H-SiC. Des densites de courant de plusieurs kA/cm2 ont egalement pu etre injectees pour des tensions situees autour de 5 - 6 V. En regime de polarisation inverse, aucun claquage n'est observe jusqu'a 400 V et les densites de courant de fuite a faible champ electrique dans la gamme 10-100 nA/cm2 ont ete mesurees. Toutes ces avancees si situent au niveau de l'etat de l'art pour des composants SiC aussi simples, toutes techniques de dopage confondues

Optimisation de l'épitaxie VLS du semiconducteur 4H-SiC : Réalisation de dopages localisés dans 4H-SiC par épitaxie VLS et application aux composants de puissance SiC

Stoichiometric Disturbances in Ion Implanted Silicon Carbide

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Stoichiometric Disturbances in Ion Implanted Silicon Carbide