Thank you for reading principles of optics electromagnetic theory of propagation interference and diffraction of light. As you may know, people have search hundreds times for their favorite novels like this principles of optics electromagnetic theory of propagation interference and diffraction of light, but end up in harmful downloads. Rather than enjoying a good book with a cup of coffee in the afternoon, instead they are facing with some infectious bugs inside their computer.

Principles Of Optics Electromagnetic Theory Of Propagation Interference And Diffraction Of Light

Infrared multispectral imaging is attracting great interest with the increasing demand for sensitive, low-cost and scalable devices that can distinguish coincident spectral information. However, the widespread use of such detectors is still limited by the high cost of epitaxial semiconductors. In contrast, the solution processability and wide spectral tunability of colloidal quantum dots (CQDs) have inspired various inexpensive, high-performance optoelectronic devices. Here, we demonstrate a two-terminal CQD dual-band detector, which provides a bias-switchable spectral response in two distinct bands. A vertical stack of two rectifying junctions in a back-to-back diode configuration is created by engineering a strong and spatially stable doping process. By controlling the bias polarity and magnitude, the detector can be rapidly switched between short-wave infrared and mid-wave infrared at modulation frequencies up to 100 kHz with D* above 1010 jones at cryogenic temperature. The detector performance is illustrated by dual-band infrared imaging and remote temperature monitoring. Colloidal quantum dot detectors, switchable between short-wave infrared and mid-wave infrared, are demonstrated.

Dual-band infrared imaging using stacked colloidal quantum dot photodiodes

This article presents a review on the current status, challenges, and potential future development opportunities for HgCdTe infrared materials and detectortechnology. A brief history of HgCdTe infrared technology is firstly summarized and discussed, leading to the conclusion that HgCdTe-based infrared detectors will continue to be a core infrared technology with expanded capabilities in the future due to a unique combination of its favourable properties. Recent progress and the current status of HgCdTe infrared technology are reviewed, including material growth,device architecture, device processing, surface passivation, and focal plane array applications. The further development of infrared applications requires that future infrared detectors have the features of lower cost, smaller pixel size, larger array format size, higher operating temperature, and multi-band detection, which presents a number of serious challenges to current HgCdTe-based infrared technology. The primary challenges include well controlled p-type doping, lower cost, larger array format size, higher operating temperature, multi-band detection, and advanced plasma dry etching. Various new concepts and technologies are proposed and discussed that have the potential to overcome the existing primary challenges that are inhibiting the development of next generation HgCdTeinfrared detectortechnology.

Progress, challenges, and opportunities for HgCdTe infrared materials and detectors

In the last two decades, several new concepts for improving the performance of infrared detectors have been proposed. These new concepts particularly address the drive towards the so-called high operating temperature focal plane arrays (FPAs), aiming to increase detector operating temperatures, and as a consequence reduce the cost of infrared systems. In imaging systems with the above megapixel formats, pixel dimension plays a crucial role in determining critical system attributes such as system size, weight and power consumption (SWaP). The advent of smaller pixels has also resulted in the superior spatial and temperature resolution of these systems. Optimum pixel dimensions are limited by diffraction effects from the aperture, and are in turn wavelength-dependent. In this paper, the key challenges in realizing optimum pixel dimensions in FPA design including dark current, pixel hybridization, pixel delineation, and unit cell readout capacity are outlined to achieve a sufficiently adequate modulation transfer function for the ultra-small pitches involved. Both photon and thermal detectors have been considered. Concerning infrared photon detectors, the trade-offs between two types of competing technology-HgCdTe material systems and III-V materials (mainly barrier detectors)-have been investigated.

http://iopscience.iop.org/article/10.1088/0034-4885/79/4/046501/pdf

Challenges of small-pixel infrared detectors: a review

The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the quantum-based detectors (i.e., QWIPs, QDIPs, DWELL-IPs, and SLS-based photodetectors). In this paper, we review the progress made in all of these systems over the last decade plus, compare the relative merits of the systems as they stand now, and discuss where some of the leading research groups in these fields are going to take these technologies in the years to come.

Progress in Infrared Photodetectors Since 2000

An infrared camera based on a 256×256 focal plane array (FPA) for the second atmospheric window (3–5 µm) has been realized for the first time with InAs/GaSb short period superlattices (SLs). The SL detector structure with a broken gap type-II band alignment was grown by molecular beam epitaxy on GaSb substrates. Effective bandgap and strain in the superlattice were adjusted by varying the thickness of the InAs and GaSb layers and the controlled formation of InSb-like bonds at the interfaces. The FPAs were processed in a full wafer process using optical lithography, chemical-assisted ion beam etching, and conventional metallization technology. The FPAs were flip-chip bonded using indium solder bumps with a read-out integrated circuit and mounted into an integrated detector cooler assembly. The FPAs with a cut-off wavelength of 5.4 µm exhibit quantum efficiencies of 30% and detectivity values exceeding 1013 Jones at T=77 K. A noise equivalent temperature difference (NETD) of 11.1 mK was measured for an integration time of 5 ms using f/2 optics. The NETD scales inversely proportional to the square root of the integration time between 5 ms and 1 ms, revealing background limited performance. Excellent thermal images with low NETD values and a very good modulation transfer function demonstrate the high potential of this material system for the fabrication of future thermal imaging systems.

256×256 focal plane array midwavelength infrared camera based on InAs/GaSb short-period superlattices

We present our latest results on cooled p-on-n planar mercury cadmium telluride (MCT) photodiode technology Along with a reduction in dark current for raising the operating temperature (T
 op), AIM INFRAROT-MODULE GmbH (AIM) has devoted its development efforts to shrinking the pixel size Both are essential requirements to meet the market demands for reduced size, weight and power and high-operating temperature applications Detectors based on the p-on-n technology developed at AIM now span the spectrum from the mid-wavelength infrared (MWIR) to the very long wavelength infrared (VLWIR) with cut-off wavelengths from 5 μm to about 135 μm at 80 K The development of the p-on-n technology for VLWIR as well as for MWIR is mainly implemented in a planar photodetector design with a 20-μm pixel pitch For the VLWIR, dark currents significantly reduced as compared to ‘Tennant’s Rule 07’ are demonstrated for operating temperatures between 30 K and 100 K This allows for the same dark current performance at a 20 K higher operating temperature than with previous AIM technology For MWIR detectors with a 20-μm pitch, noise equivalent temperature differences of less than 30 mK are obtained up to 170 K This technology has been transferred to our small pixel pitch high resolution (XGA) MWIR detector with 1024 × 768 pixels at a 10-μm pitch Excellent performance at an operating temperature of 160 K is demonstrated

Progress of MCT Detector Technology at AIM Towards Smaller Pitch and Lower Dark Current

A closed-form probabilistic model for inter-pixel crosstalk in planar HgCdTe focal plane arrays is presented, providing simple expressions of crosstalk as function of device parameters like the pixel pitch, the absorber thickness, and the extension of the carrier depleted region. The method is effective in particular for performing parameter sensitivity studies on inter-pixel crosstalk, as an alternative to large-scale numerical simulations. The model is validated against three-dimensional combined optical and electrical numerical simulations, considering realistic, non-monochromatic illumination.

Diffusive-Probabilistic Model for Inter-Pixel Crosstalk in HgCdTe Focal Plane Arrays

Driven by the need for more efficient and cost-effective production of infrared (IR) detectors as well as the demands for novel (third-generation) device concepts, a large amount of effort has been spent on the development of molecular beam epitaxy (MBE) for fabrication of high-quality HgCdTe (MCT) layers on both CdZnTe and alternative substrates. The bulk of recent publications focuses on Si as an alternative substrate material. The intent of this paper is to highlight the potential benefit of using GaAs as an alternative substrate material by presenting MCT material grown by MBE on GaAs at AIM. Mid-wave IR MCT/GaAs material has been processed by AIM’s standard planar n-on-p technique. Focal-plane arrays with 640 × 512 pixels and a 15 μm pitch design show low and homogeneous noise equivalent temperature difference of 18.3 ± 2.0 mK at 99.31% operability. To analyze the feasibility of MBE growth of long-wave IR MCT on GaAs, a layer with 8.8 μm cutoff at 80 K has been fabricated and processed into 640 × 512 pixels, 15-μm-pitch arrays. Initial current–voltage characterization yields promising results and illustrates the potential of MBE growth for LWIR MCT detector production.

MBE Growth of MCT on GaAs Substrates at AIM

In recent years, continuous progress has been published in the development of HgCdTe (MCT) infrared (IR) focal plane arrays (FPAs) fabricated by molecular beam epitaxy on GaAs substrates. In this publication, further characterization of the state-of-the art 1280 × 1024 pixel, 15-μm pitch detector fabricated from this material in both the mid-wavelength (MWIR) and long-wavelength (LWIR) IR region will be presented. For MWIR FPAs, the percentage of defective pixel remains below 0.5% up to an operating temperature (TOP) of around 100 K. For the LWIR FPA, an operability of 99.25% was achieved for a TOP of 76 K. Additionally, the beneficial effect of the inclusion of MCT layers with a graded composition region was investigated and demonstrated on current–voltage (IV) characteristics on test diodes in a MWIR FPA.

Improvements of MCT MBE Growth on GaAs

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

D. Eich

Author Tools

Chat about Author