D.E. Crees
4 Papers
43 Citations
D.E. Crees is an academic researcher. The author has contributed to research in topics: Trench & Current injection technique. The author has an hindex of 3, co-authored 4 publications.
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Papers
1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance
TL;DR: In this article, the authors report the full development of 1.2 kV Trench IGBT's with ultralow on-resistance, latch-up free operation and highly superior overall performance when compared to state of the art IGBTs.
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Silicon MOS controlled bipolar power switching devices using trench technology
T. Trajkovic,Florin Udrea,Gehan A. J. Amaratunga,William I. Milne,S.S.M. Chan,P. Waind,J. Thomson,D.E. Crees +7 more
TL;DR: In this article, a review of the development of trench gate IGBTs is given and new promising device structures based on trench technology which use PIN diode and thyristor type carrier distributions to reduce power losses within the device.
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Development of the Next Generation of Insulated Gate Bipolar Tranistors based on Trench Technology
Florin Udrea,S.S.M. Chan,J. Thomson,S. Keller,Gehan A. J. Amaratunga,A.D. Millington,P. Waind,D.E. Crees +7 more
- 22 Sep 1997
TL;DR: In this article, the authors present preliminary results towards developing the next generation of Insulated Gate Bipolar Transistors for high voltage applications, where the trench profile, the gate oxide quality, the trench inversion layer mobility and lay-out design are discussed.
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Optimum design of 1.4 kV trench IGBTs-the next generation of high power switching devices
T. Trajkovic,P. Waind,J. Thomson,Florin Udrea,X. Yuan,S. Huang,William I. Milne,Gehan A. J. Amaratunga,D.E. Crees +8 more
- 29 Jun 1999
TL;DR: In this article, the authors present an optimum design of a 1.4 kV trench IGBT using a new, fully integrated, optimisation system comprising process and device simulators and the RSM optimiser.
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