D. Drouan
6 Papers
D. Drouan is an academic researcher. The author has contributed to research in topics: Irradiation & Energy-dispersive X-ray spectroscopy. The author has an hindex of 3, co-authored 6 publications.
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Papers
Extended defect change in UO2 during in situ TEM annealing
TL;DR: In situ thermal annealing up to 1400°C on pre-irradiated polycrystalline UO2 thin foils was performed inside a TEM for the first time as discussed by the authors.
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Changes in voids induced by ion irradiations in UO2: In situ TEM studies
C. Onofri,C. Sabathier,G. Carlot,D. Drouan,C. Bachelet,Cédric Baumier,M. Gérardin,M. Bricout +7 more
TL;DR: In this paper, the void size and density in polycrystalline UO2 thin foils were studied in order to study the void change with damage, temperature (ranging from −180 to 1100 °C) and exogenous xenon atoms incorporation.
22
From arc-melted ingot to MTR fuel plate: A SEM/EBSD microstructural study of U3Si2
Julien Havette,Xavière Iltis,Hervé Palancher,D. Drouan,Olivier Fiquet,É. Castelier,Mathieu Pasturel +6 more
TL;DR: In this paper, a reinvestigation of the microstructure of U3Si2 particles is proposed to take full advantage of the new capabilities offered by Electron BackScattered Diffraction (EBSD) techniques.
8
Microstructural characteristics of a fresh U(Mo) monolithic mini-plate: Focus on the Zr coating deposited by PVD
Xavière Iltis,D. Drouan,Thierry Blay,Isabelle Zacharie,C. Sabathier,C. Onofri,Christian Steyer,Christian Schwarz,Bruno Baumeister,Jérôme Allenou,Bertrand Stepnik,Winfried Petry +11 more
TL;DR: In this paper, extensive microstructural characterizations were performed on a fresh archive mini-plate, using optical microscopy, scanning electron microscopy (SEM), EBSD, and focused ion beam (FIB)/transmission EM with nano EDS.
Microstructure evolution and phase transformation of heavy-ion irradiated U–Mo/Al fuels
TL;DR: In this article, the microstructure evolution and phase transformation of the interdiffusion layer resulting from the interaction between U-Mo and Al in UMo/Al bilayer systems irradiated from 140°C to 275°C are discussed.