D.-C. Lim

Abstract: We have deposited cubic SiC thin films on Si(001) substrates by high vacuum chemical vapor deposition (CVD) using a single molecular precursor of 1,3-disilabutane (DSB) at various temperatures (600–1000 °C) and pressures in the range of 1×10−6–1×10−5 Torr. A single-crystalline cubic SiC thin film with stoichiometric composition can be obtained under deposition conditions of 900–1000 °C and 4.0–6.5×10−6 Torr. However, on increasing the deposition pressure and decreasing the growth temperature to 1×10−5 Torr and 600 °C, respectively, the film became polycrystalline. The effect of deposition pressure on the film growth rate and crystallinity was also studied. Based on the experimental results from x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy, and transmission electron diffraction, the best SiC film was grown at 900 °C and 6.5×10−6 Torr of DSB at a maximum growth rate of 0.1 μm/h. The thicknesses of as-grown films were determined by ...