Recently, negative differential resistance devices have attracted considerable attention due to their folded current-voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.

/pdf/phosphorene-rhenium-disulfide-heterojunction-based-negative-148jgwt1xu.pdf

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic.

The circuit formed by a nanoscale tunnel junction in series with a capacitance and a voltage source is the building block of most multi-junction circuits of single electronics. The state of this “single electron box” is entirely determined by the numbern of extra electrons on the intermediate “island” electrode between the junction and the capacitance. We have fabricated such a system and measured the charge on the junction capacitance, which is directly related to the average value ofn, as a function of the bias voltage using a Fulton-Dolan electrometer. At low temperature, the junction charge followed thee-periodic sawtooth function expected from the theory of macroscopic charge quantization. Strikingly,e-periodic variations were also observed when the box was superconducting. The thermal rounding of the sawtooth function is well explained by a simple model, except at the lowest temperatures.

Direct Observation of Macroscopic Charge Quantization

A physically based compact analytical single electron transistor (SET) model is proposed for hybrid CMOS-SET analog circuit simulation. The modeling approach is based on the "orthodox theory" of single electron tunneling, and valid for single or multi gate, symmetric or asymmetric devices and can also explain the background charge effect. The model parameters are physical device parameters and an associated parameter extraction procedure is reported. The device characteristics produced by the proposed model are verified with Monte Carlo simulation for large range of drain to source voltages (|V/sub DS/|/spl les/3e/C/sub /spl Sigma//) and temperatures [T/spl les/e/sup 2//(10k/sub B/C/sub /spl Sigma//)] and good agreements are observed. The proposed model is implemented in a commercial circuit simulator in order to develop a computer-aided design framework for CMOS-SET hybrid IC designs. A series of SPICE simulations are successfully carried out for different CMOS-SET hybrid circuits in order to reproduce their experimental/Monte Carlo simulated characteristics.

Analytical modeling of single electron transistor for hybrid CMOS-SET analog IC design

Memory Effect and Negative Differential Resistance by Electrode‐ Induced Two‐Dimensional Single‐ Electron Tunneling in Molecular and Organic Electronic Devices

Recent years have seen tremendous progress in the theoretical understanding of quantum systems driven dissipatively by coupling them to different baths at their edges. This was possible because of the concurrent advances in the models used to represent these systems, the methods employed, and the analysis of the emerging phenomenology. Here we aim to give a comprehensive review of these three integrated research directions. We first provide an overarching view of the models of boundary-driven open quantum systems, both in the weak and strong coupling regimes. This is followed by a review of state-of-the-art analytical and numerical methods, both exact, perturbative and approximate. Finally, we discuss the transport properties of some paradigmatic one-dimensional chains, with an emphasis on disordered and quasiperiodic systems, the emergence of rectification and negative differential conductance, and the role of phase transitions, and we give an outlook on further research options. 

Nonequilibrium boundary-driven quantum systems: Models, methods, and properties

We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/AlxOy islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport.

/pdf/negative-differential-resistance-due-to-single-electron-4474ij3aqm.pdf

Negative differential resistance due to single-electron switching

The Josephson quasiparticle (JQP) cycle in a voltage-biased superconducting single-electron transistor (SSET) combines coherent Cooper pair tunneling with incoherent quasiparticle decay We have measured the influence of current flow through an independently-biased SSET on the JQP cycle when the two SSET's have a strong mutual capacitive coupling We find, among other effects, that the JQP current in one SSET is enhanced by the presence of a quasiparticle current in the other SSET A simplified model of the coupled-SSET system is presented which reproduces the enhancement effect

Enhancement of Josephson quasiparticle current in coupled superconducting single-electron transistors

The Josephson quasiparticle (JQP) cycle in a voltage-biasedsuperconducting single-electron transistor (SSET) combinescoherent Cooper pair tunneling with incoherent quasiparticledecay. We have measured a striking modification of the JQPprocess in a system of two SSET's having a large mutualcapacitance. We find, among other effects, that the JQPcurrent in one SSET may be enhanced by the presence of aquasiparticle current through the other SSET. A simplified model of the coupled-SSET system is presented which reproducesthe enhancement effect.

Enhancement of Josephson Quasiparticle Current in Coupled Superconducting Single-electron Transistors

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Negative differential resistance due to single-electron switching

Enhancement of Josephson quasiparticle current in coupled superconducting single-electron transistors

Enhancement of Josephson Quasiparticle Current in Coupled Superconducting Single-electron Transistors