D. Blanks
Raytheon
8 Papers
118 Citations
D. Blanks is an academic researcher from Raytheon. The author has contributed to research in topics: Quantum tunnelling & Scattering. The author has an hindex of 7, co-authored 8 publications.
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Papers
Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes
Sean L. Rommel,Thomas E. Dillon,M. W. Dashiell,H. Feng,James Kolodzey,Paul R. Berger,Phillip E. Thompson,Karl D. Hobart,Roger K. Lake,Alan Seabaugh,Gerhard Klimeck,D. Blanks +11 more
TL;DR: In this article, a Si/Si 0.5Ge0.5/Si heterostructure was used to grow tunneling diodes using low temperature molecular beam epitaxy, which utilized both a central intrinsic spacer and injected injectors.
161
Physical oxide thickness extraction and verification using quantum mechanical simulation
C. Bowen,Chenjing Lucille Fernando,Gerhard Klimeck,Amitava Chatterjee,D. Blanks,Roger K. Lake,J.C. Hu,J. Davis,M. Kulkarni,Sunil V. Hattangady,Ih-Chin Chen +10 more
- 07 Dec 1997
TL;DR: Physical gate oxide thickness is extracted from TiN gate PMOS and NMOS capacitance voltage measurements using an efficient multi-band Hartree self-consistent Poisson solver as discussed by the authors.
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Quantum Transport with Band-Structure and Schottky Contacts
TL;DR: In this article, a parametrized single-band model that mimics the full-band Γ-valley non-parabolicity was proposed, and a method for calculating the semi-classical and quantum electron charge with the sp3s* band-structure model was presented.
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NEMO: general release of a new comprehensive quantum device simulator
D. Blanks,Gerhard Klimeck,Roger K. Lake,D. Jovanovic,R. C. Bowen,Chenjing Lucille Fernando,William R. Frensley,Manhua Leng +7 more
- 01 Jan 1998
TL;DR: NEMO (NanoElectronic MOdeling) is a new quantum device simulator based on a non-equilibrium Green's function formalism that simulates a wide variety of quantum devices, including RTDs, HEMTs, HBTs, superlattices and Esaki diodes as mentioned in this paper.
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The Effects of Electron Screening Length and Emitter Quasi-Bound States on the Polar-Optical Phonon Scattering in Resonant Tunneling Diodes
Gerhard Klimeck,Roger K. Lake,D. Blanks,Chenjing Lucille Fernando,Ch. Bowen,Theodore S. Moise,Yung-Chou Kao +6 more
TL;DR: In this paper, the authors systematically explore two model parameters which determine the strength of the polar optical phonon (POP) scattering enhanced valley current: 1) the electron screening length and 2) the length of the emitter electron accumulation region included in the simulation.
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