We computed the atomic shift sizes of the closest adjacent atoms adjoining the (001) surface F-center at ABO3 perovskites. They are significantly larger than the atomic shift sizes of the closest adjacent atoms adjoining the bulk F-center. In the ABO3 perovskite matrixes, the electron charge is significantly stronger confined in the interior of the bulk oxygen vacancy than in the interior of the (001) surface oxygen vacancy. The formation energy of the oxygen vacancy on the (001) surface is smaller than in the bulk. This microscopic energy distinction stimulates the oxygen vacancy segregation from the perovskite bulk to their (001) surfaces. The (001) surface F-center created defect level is nearer to the (001) surface conduction band (CB) bottom as the bulk F-center created defect level. On the contrary, the SrF2, BaF2 and CaF2 bulk and surface F-center charge is almost perfectly confined to the interior of the fluorine vacancy. The shift sizes of atoms adjoining the bulk and surface F-centers in SrF2, CaF2 and BaF2 matrixes are microscopic as compared to the case of ABO3 perovskites.

Tendencies in ABO3 Perovskite and SrF2, BaF2 and CaF2 Bulk and Surface F-Center Ab Initio Computations at High Symmetry Cubic Structure

Validation of the model of TSL isothermal decay in dosimetric α-Al2O3 crystals

Influence of growth process and crystal defects on sapphire brittleness

Luminescence properties of Lucalox-CS alumina substrates

Electroforming of metal–insulator–metal (MIM) diodes is a non-destructive dielectric breakdown that results in a conducting filament in the insulator and changes the high resistance of the as-prepared MIM diode into a low-resistance state. It is a critical step in the development of conducting states between which switching can occur in memristors or resistive switching memories. Electroforming of Al–Al2O3–Ag diodes in vacuum results in the formation of a conducting Al2O3 filament. There are Ohmic contacts at the Al–Al2O3 and Al2O3–Ag interfaces. Electronic processes develop, such as voltage-controlled negative resistance in the current–voltage (I–V) characteristics, electron emission into vacuum (EM), and electroluminescence (EL). I–V curves, EM, and EL of three electroformed Al–Al2O3–Ag diodes with anodic Al2O3 thicknesses between 36 nm and 49 nm have been measured with 20 mV resolution between voltage steps. Periodic voltage structure occurs for the three electronic processes for applied voltages betwe...

Čerenkov phonon radiation and phonon structure in electron emission, electroluminescence, and current–voltage characteristics of electroformed Al–Al2O3–Ag diodes

Spectrally resolved thermally stimulated luminescence of irradiated anion-defective alumina single crystals

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Spectrally resolved thermally stimulated luminescence of irradiated anion-defective alumina single crystals