Existierende und hypothetische intermediärvalente AgII/AgIII‐ und AgII/AgI‐Fluoride als potentielle Supraleiter

The interface energy spectrum in real band-inverted PbTe/SnTe heterojunctions formed in both the (111) and (001) planes is calculated. It is shown that, even if the valence band of SnTe lies above the conduction band minimum of PbTe, the interface midgap states may still exist due to the strain effect on the band gaps.

/pdf/interface-energy-spectrum-of-real-pbte-snte-heterojunctions-ccjkulmecc.pdf

Interface energy spectrum of real PbTe/SnTe heterojunctions

Metal/superconductor/semiconductor (Ag/Hg1Ba2Ca1Cu2O6+δ (Hg-1212)/CdSe) heterostructures have been successfully fabricated using the pulse electrodeposition technique. The electrochemical parameters are optimized and diffusion free growth of CdSe on to Ag/Hg-1212 was obtained by employing underpotential deposition and by studying nucleation and growth mechanism during deposition. The heterostructures are characterized by x-ray diffraction, scanning electron microscopy studies and low-temperature four-probe electrical resistivity measurements. After the deposition of CdSe, the critical transition temperature of Hg-1212 films was found to be increased from 115 K with Jc (77 K) = 1.7 × 103 A cm−2 to 117.2 K with Jc (77 K) = 1.91 × 103 A cm−2. Tc and Jc (77 K) values were 120.3 K and 3.7 × 103 A cm−2, respectively, when the heterostructure was irradiated with red He–Ne laser. The improvements in superconducting properties of Hg-1212 in Ag/Hg-1212/CdSe heterostructures have been explained at length in this paper.

Studies on the fabrication of Ag/Hg1Ba2Ca1Cu2O6+δ/CdSe heterostructures using the pulse electrodeposition technique

Metal/superconductor/semiconductor (Ag/HgBaCaCuO/CdSe) heterostructures have been successfully fabricated using pulse-electrodeposition technique. The electrochemical parameters are optimized and diffusion free growth of CdSe onto Ag/HgBaCaCuO was obtained by employing under-potential deposition and by studying nucleation and growth mechanism during deposition. The heterostructures are characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM), scanning electron microscopy (SEM) studies and low temperature four probe electrical resistivity measurements. After the deposition of CdSe the critical transition temperature of HgBaCaCuO films was found be increased from 115 K with Jc = 1.7 x 103 A/cm2 to 117.2 K with Jc = 1.91 x 103 A/cm2. When the heterostructure was irradiated with red He-Ne laser (2 mW), the Tc was further enhanced to 120.3 K with Jc = 3.7 x 103 A/cm2. This increase in superconducting parameters of HgBaCaCuO in Ag/ HgBaCaCuO/CdSe heterostructure has been explained at length in this paper. 
Keywords. Electrodeposition; Hg-based cuprate; semiconductor; heterostructures; electrical properties. 
PACS Nos 81.15.Pq; 74.72.Gr; 78.40.Fy; 84.37; 73.40 *E-mail: pawar_s_h@yahoo.com, shpawar_phy@unishivaji.ac.in

Studies on Fabrication of Ag/HgBaCaCuO/CdSe Heterostructures by Pulse-Electrodeposition Route

Novel superconducting superlattices (SL) with transition temperature 4–6 K consisting only of semiconducting materials are discovered. Among them there are multilayers containing ferromagnetic chalcogenide EuS. Single films of the semiconducting materials constituting SL do not reveal superconductivity, and it appears only in multilayered systems. It is shown that superconductivity is confined to the interfaces between two semiconductors. The possible correlation between superconductivity and interfacial regualr grids of misfit dislocations is discussed.

Superconductivity in the novel semiconducting superlattices

Recent data on lead salt superconducting superlattices are interpreted in terms of an electronic pairing mechanism. The strain in these structures is estimated within the uncertainties in the deformation potential parameters and boundary conditions. The results indicate that the PbS/PbTe superlattice on KCl [100] substrate is particularly susceptible to band inversion in the PbTe layers. Consequently, electrons (or holes) are trapped in the ensuing localized states associated with the PbS/PbTe interface. By virtue of an exciton-exchange mechanism these electrons condense into a superconducting state. The estimated Tc is in reasonable agreement with the data. Finally the observed superconductivity in another IV–VI superlattice is discussed in light of the present model.



Neuere Ergebnisse an supraleitenden Bleisalz-Supergittern werden mit einem elektronischen Paarbil dungsmechanismus interpretiert. Die Spannungen in diesen Strukturen werden im Bereich der Unisicherheiten der Parameter des Deformationspotentials und der Randbedingungen berechnet. Die Ergebnisse zeigen, das das PbS/PbTe-Supergitter auf KCl-(100)-Substraten besonders empfindlich ist gegenuber Bandinversion in den pbTe-Schichten. Folglich werden Elektronen (order Locher) in den sich ergebenden lokalisierten Zusrtanden, die mit der pbS/pbTe-Grenzflauche verbunden sind, einge-fangen. Aufgrund eines Exziton-Austauschmechanismus kondensieren diese Elektronen zu einem supraleitenden Zustad. Das berechnete Tc ist in vernunftiger Ubereinstimmung mit den Werten. Schlieslich wird die beobachtete Supraleitung in einem anderen IV–VI-Supergitter mit dem angegebenen Modell diskutiert.

Strain-induced superconductivity in lead salt superlattices

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Strain-induced superconductivity in lead salt superlattices