Cuimei Wang

TL;DR: In this paper, a wide band-gap GaN-base heterojunction field effect transistor (HJFET) structure is proposed, which includes a substrate, a high temperature AlN nucleating layer on the substrate, an AlInGaN supper lattice buffer layer processed on the nucleating layers, a non-intentional or intentional doped GaN high resist layer processing on the buffer layer, an N-type doped high transfer rate GaN layer processed in the high resist layers, and an insertion layer set on the insertion layer.

TL;DR: In this article, a GaN-based HFET structure is proposed, which comprises an underlay, a low-temperature GaN nucleating layer which is set on the underlay; a resistive formation doped or unintended doped with GaN, which is made on the upside of the low temperature GaN nucleus; an unintended doping high mobility GaN layer, which was made on an aluminum nitride interposed layer, and a component step change AlxInyGazN layer unintended Doped or doped in type N.

TL;DR: In this article, a gallium nitride-based double heterojunction field effect transistor structure comprises a substrate, a low temperature gallium nucleation layer or a high temperature aluminum nitride layer formed on the substrate; a high insulation layer with unintentional-doped or doped gallium-nitride; the channel layer is formed on a first aluminum-naphase inserting layer; a second aluminum-oxide inserting layer, the second aluminum oxide inserting layer and the second gallium oxide channel layer are formed on an n-type doped AlxInyGaz

TL;DR: In this article, a gallium nitride-based high electron mobility transistor structure consisting of a substrate, a low temperature nucleating layer is produced on the substrate, an indium gallium-nitride insertion layer is created on the gallium n-drone based high resistivity layer, and an aluminum gallium ionide barrier layer is constructed on the aluminum galliam ionide insertion layer to effectively inhibit the current collapse effect.