The invention provides a method for manufacturing a solar cell by using antimony for auxiliary growth of indium arsenide/GaAs (gallium arsenide) quantum dots, comprising the following steps: step 1, selecting a substrate; step 2, growing an n type GaAs layer and an intrinsic GaAs cushion layer in sequence on the substrate; step 3, depositing an antimony layer on the intrinsic GaAs cushion layer; step 4, growing a quantum dot structure with multiple periods, an intrinsic GaAs layer, a p type GaAs layer, a p type GaAs layer, a p type Al0.8Ga0.2As layer and a p type GaAs layer in sequence on the antimony layer; step 5, evaporating an upper metal electrode on the p type GaAs layer; step 6, etching the upper metal electrode so as to form a meshed upper metal electrode; step 7, growing an antireflection layer on the meshed upper metal electrode and an exposed p type GaAs layer respectively; step 8, peeling off the antireflection layers so as to expose the upper metal electrode; step 9, manufacturing a lower metal electrode on the lower surface of the substrate to form a cell assembly; and step 10, encapsulating the cell assembly to finish the manufacturing of the solar cell.

Method for manufacturing solar cell by using antimony for auxiliary growth of indium arsenide/GaAs (gallium arsenide) quantum dots

The invention belongs to the technical field of manufacturing of flexible substrate solar cells, and particularly relates to a flexible substrate solar cell with an adjustable band gap quantum well structure and a preparation method. The particular structure of the solar cell is an Al electrode /GZO/P type nc-Si: H/I layer intrinsic InxGa1-xN/N type nc-Si: H/GZO/Al back electrode/A1N/PI flexible substrate. The preparation method includes the steps that firstly, an A1N insulating layer and an A1 back electrode are prepared through magnetron sputtering; a GZO base transparent conducting thin film, an N type nc-Si: H thin film, an IncGa1-xN quantum well intrinsic crystal thin film, a P type nc-Si: H thin film and a GZO base transparent conducting thin film are sequentially deposited through ECR-PEMOCVD; eventually a metal A1 electrode is prepared. The flexible substrate solar cell with the adjustable band gap quantum well structure is excellent in flexibility, light in weight and convenient to carry, has industrialization and market space, and can be massively produced, and the preparation process is simple.

Flexible substrate solar cell with adjustable band gap quantum well structure and preparation method

The embodiment of the invention discloses a preparation method for a diluted magnetic semiconductor material. The method comprises the following steps: an epitaxial layer is prepared on a substrate material, so that a base material is obtained; the base material is then placed in a high-energy ion implanter; first ions are implanted into the epitaxial layer with a first energy and a first dosage,and second ions are then implanted into the epitaxial layer with a second energy and a second dosage, so that a doped material is obtained; and the doped material is placed in a quick annealing oven and is annealed at a first temperature for a first period. Compared with the single-energy state ion implantation method in the prior art, the method provided by the invention has the advantages that dual-energy state ion implantation is adopted, that is, the ions are implanted into a semiconductor substrate with the different energies and the different dosages, so that the magnetic ions can be more uniformly distributed in the longitudinal direction of a diluted magnetic semiconductor film, better ferromagnetic property can be achieved through a lower dosage of the magnetic ions, and the diluted magnetic semiconductor material can be more widely applied in discrete devices and integrated circuits.

Preparation method for diluted magnetic semiconductor material

The invention relates to a solar cell based on a quantum dot superlattice structure. The solar cell comprises an active region, wherein the active region comprises a first i-GaAs layer, a first GaNAs/InGaAs superlattice structure, a second InGaAs superlattice structure and a second i-GaAs layer, the second InGaAs superlattice structure is arranged on the surface of the first GaNAs/InGaAs superlattice structure, the thicknesses of the first i-GaAs layer and the second i-GaAs layer are same, the thickness of the first GaNAs/InGaAs superlattice structure is different from the thickness of an InGaAs layer in the second InGaAs superlattice structure, quantum dots are doped into the second InGaAs superlattice structure, and other elements are doped into the InGaAs layer. The invention provides a preparation method of the above cell, and the structure of each layer of the cell is sequentially prepared by a metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) technique. With the technology disclosed by the invention, the performance of the solar cell can be optimized, and the conversion efficiency is improved.

Solar cell based on quantum dot superlattice structure and preparation method of solar cell

Disclosed is a quantum well structure preparation method The quantum well structure preparation method comprises: implanting doped metal, a barrier layer cationic precursor and a barrier layer anionic precursor, and carrying out deposition on a surface of a substrate to prepare a barrier layer (S01); and successively implanting a quantum dot anionic precursor and a quantum dot cationic precursor, and carrying out deposition on a surface of the barrier layer to prepare semiconductor quantum dots (S02), wherein atoms of the doped metal lack electrons, and an absolute value of a difference between the radius of the doped metal and the radius of a barrier layer cation is 01 angstrom-03 angstrom Nucleation sites distributed uniformly are formed on a surface of a barrier layer by means of introducing doped metal, such that the uniformity of the growth of quantum dots on the surface of the barrier layer is improved, and the quantum efficiency of a quantum well is improved

Quantum well structure preparation method and quantum well structure

The invention relates to the technical field of inorganic photoelectric technology, and discloses a p-i-n type InGaN quantum dot solar battery structure and a manufacture method thereof. The p-i-n type InGaN quantum dot solar battery structure comprises a substrate, a low-temperature gallium nitride nucleation layer, a non-intentionally doped gallium nitride buffer layer, an n-type doped InxGal-xN layer, a non-doped i layer InyGal-yN quantum dot structure and a p type doped InxGal-xN layer. By adopting an InGal-xN ternary alloy material and a quantum dot structure, using the advantage of the adjustability of alloy bandwidth, combining the advantage of a quantum dot superlattice structure and strictly controlling the growth condition, the p-i-n structural material with an InyGal-yN quantum dot as an i layer and the InGal-Xn as a barrier layer can be obtained with high quality, thereby achieving 63 percent of limit conversion efficiency in theory.

p-i-n type InGaN quantum dot solar battery structure and manufacture method thereof

The invention discloses a method for preparing diluted magnetic semiconductor films, which comprises: selecting III nitride semiconductor film materials, employing the dual-intensity state ion implantation method to implant rare-earth metal ions on the surface of semiconductor film materials, and sending the sample implanted by rare-earth metal ions to a short anneal oven for annealing in the atmosphere of nitrogen. Because the invention is used, the diluted magnetic semiconductor films with better magnetic performances and semiconductor performances are acquired.

Method for producing dilute magnetic semiconductor film

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p-i-n type InGaN quantum dot solar battery structure and manufacture method thereof

Method for producing dilute magnetic semiconductor film