The ground-breaking demonstration of the electric field effect in graphene reported more than a decade ago prompted the strong push towards the commercialization of graphene as evidenced by a wealth of graphene research, patents and applications. Graphene flake production capability has reached thousands of tonnes per year, while continuous graphene sheets of tens of metres in length have become available. Various graphene technologies developed in laboratories have now transformed into commercial products, with the very first demonstrations in sports goods, automotive coatings, conductive inks and touch screens, to name a few. Although challenges related to quality control in graphene materials remain to be addressed, the advancement in the understandings of graphene will propel the commercial success of graphene as a compelling technology. This Review discusses the progress towards commercialization of graphene for the past decade and future perspectives. This Review reflects on the 15 years of advances in the field of 2D materials towards commercialization of graphene and its future perspectives.

Path towards graphene commercialization from lab to market.

Diamond with an ultra-wide bandgap shows intrinsic performance that is extraordinarily superior to those of the currently available wide-bandgap semiconductors for deep-ultraviolet (DUV) photoelect...

Progress in semiconductor diamond photodetectors and MEMS sensors

We report the first observation of linear magnetoresistance (LMR) in multilayer epitaxial graphene grown on SiC. We show that multilayer epitaxial graphene exhibits large LMR from 2.2 K up to room temperature and that it can be best explained by a purely quantum mechanical model. We attribute the observation of LMR to inhomogeneities in the epitaxially grown graphene film. The large magnitude of the LMR suggests potential for novel applications in areas such as high-density data storage and magnetic sensors and actuators.

/pdf/quantum-linear-magnetoresistance-in-multilayer-epitaxial-3tt0p0a03e.pdf

Quantum Linear Magnetoresistance in Multilayer Epitaxial Graphene

The development of next-generation wireless communication technology requires integrated radiofrequency devices capable of operating at frequencies greater than 90 GHz. Carbon nanotube field-effect transistors are promising for such applications, but key performance metrics, including operating frequency, at present fall below theoretical predictions. Here we report radiofrequency transistors based on high-purity carbon nanotube arrays that are fabricated using a double-dispersion sorting and binary liquid interface aligning process. The nanotube arrays exhibit a density of approximately 120 nanotubes per micrometre, a maximum carrier mobility of 1,580 cm2 V−1 s−1 and a saturation velocity of up to 3.0 × 107 cm s−1. The resulting field-effect transistors offer high d.c. performance (on-state current of 1.92 mA µm−1 and peak transconductance of 1.40 mS μm−1 at a bias of −0.9 V) for operation at millimetre-wave and terahertz frequencies. Transistors with a 50 nm gate length show current-gain and power-gain cutoff frequencies of up to 540 and 306 GHz, respectively, and radiofrequency amplifiers can exhibit a high power gain (23.2 dB) and inherent linearity (31.2 dBm output power of the third-order intercept point) in the K-band (18 GHz). Transistors based on arrays of aligned carbon nanotubes can exhibit cutoff frequencies of up to 540 GHz, and could be further scaled for operation at millimetre-wave and terahertz frequencies.

Radiofrequency transistors based on aligned carbon nanotube arrays

Room-temperature, low-impedance and high-sensitivity terahertz direct detector based on bilayer graphene field-effect transistor

We study the magnetotransport properties of monolayer graphene grown on SiC substrates. At low magnetic fields, a parabolic magnetoresistance (MR) is observed. With increasing magnetic field, however, this parabolic MR is changed to a linear field dependence that does not show signs of saturation for magnetic fields up to 9 T. At a fixed field, the value of the linear MR decreases with increasing temperature, with its value as large as 80% under 9 T at room temperature. Furthermore, the Hall mobility is found to be suppressed when the sample is annealed at 390 K under a helium atmosphere, with this suppression causing a decrease of the observed linear MR. The decrease in the linear MR shows a linear dependence on Hall mobility, which is indicative of the application of the monolayer graphene. We attribute the observed linear MR to a classical origin owing to the close relation between the MR and Hall mobility.

Classical linear magnetoresistance in epitaxial graphene on SiC

Abstract Diamond field-effect transistor (FET) has great application potential for high frequency and high power electronic devices. In this work, diamond FETs were fabricated on (0 0 1) single crystal diamond with homoepitaxial layer. The nitrogen impurity content in the homoepitaxial layer is greatly decreased as measured by the Raman and photoluminescence spectra. The diamond field effect transistor with 100 nm Al2O3 as gate dielectric shows ohomic contact resistance of 35 Ω . mm, maximum drain saturation current density of 500 mA/mm, and maximum transconductance of 20.1 mS/mm. Due to the high quality of Al2O3 gate dielectric and single crystal diamond substrate, the drain work voltage of −58 V is achieved for the diamond FETs. A continuous wave output power density of 4.2 W/mm at 2 GHz is obtained. The output power densities at 4 and 10 GHz are also improved and achieve 3.1 and 1.7 W/mm, respectively. This work shows the application potential of single crystal diamond for high frequency and high power electronic devices.

https://doi.org/10.1080/26941112.2022.2082853

Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density

Quasi-free-standing epitaxial graphene grown on wide band gap semiconductor SiC demonstrates high carrier mobility and good material uniformity, which make it promising for graphene-based electronic devices. In this work, quasi-free-standing bilayer epitaxial graphene is prepared and its transistors with gate lengths of 100 nm and 200 nm are fabricated and characterized. The 100 nm gate length graphene transistor shows improved DC and RF performances including a maximum current density Ids of 4.2 A/mm, and a peak transconductance gm of 2880 mS/mm. Intrinsic current-gain cutoff frequency fT of 407 GHz is obtained. The exciting DC and RF performances obtained in the quasi-free-standing bilayer epitaxial graphene transistor show the great application potential of this material system.

Quasi-free-standing bilayer epitaxial graphene field-effect transistors on 4H-SiC (0001) substrates

Hydrogenated diamond MOSFETs with self-oxidized alumina as a gate dielectric are fabricated. The diamond MOSFETs show a high maximum drain current density of 466 mA/mm at VGS = −6 V, a transconductance of 58 mS/mm, and an off-state breakdown voltage of −53 V. The maximum output power density reaches 745 mW/mm at 2 GHz continuous wave, which is the highest reported value for diamond transistors measured at 2 GHz. The output power value measured is lower than that estimated. Pulse I-V analysis shows that the main factor that affects the output power of the diamond MOSFETs is the traps in the channel.

Radiofrequency performance of hydrogenated diamond MOSFETs with alumina

2D material of graphene has inspired huge interest in fabricating of solid state gas sensors. In this work, epitaxial graphene, quasi-free-standing graphene, and CVD epitaxial graphene samples on SiC substrates are used to fabricate gas sensors. Defects are introduced into graphene using SF6 plasma treatment to improve the performance of the gas sensors. The epitaxial graphene shows high sensitivity to NO2 with response of 105.1% to 4 ppm NO2 and detection limit of 1 ppb. The higher sensitivity of epitaxial graphene compared to quasi-free-standing graphene, and CVD epitaxial graphene was found to be related to the different doping types of the samples.

https://iopscience.iop.org/article/10.1088/1674-4926/41/3/032101/pdf

Epitaxial graphene gas sensors on SiC substrate with high sensitivity

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Papers

Classical linear magnetoresistance in epitaxial graphene on SiC

Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density

Quasi-free-standing bilayer epitaxial graphene field-effect transistors on 4H-SiC (0001) substrates

Radiofrequency performance of hydrogenated diamond MOSFETs with alumina

Epitaxial graphene gas sensors on SiC substrate with high sensitivity