The invention provides a transparent film, a manufacturing method thereof, a base plate for displaying and a display device, relates to the technical field of display, and solves the problem of low transmittance of an existing transparent film The transparent film comprises at least three stacked sub layers, the refractive indexes of the stacked sub layers are different, and the refractive index of any sub layer positioned between the bottommost layer and the topmost layer is between the refractive indexes of two sub layers adjacent to the sub layer The transparent film is applicable to the field of manufacture of the display device

Transparent film, manufacturing method thereof, base plate for displaying and display device

The invention discloses a multilayer passivation anti-reflective coating of a crystalline silicon cell. The passivation anti-reflective coating is deposited on a N-type face of the crystalline silicon cell and is characterized in that the passivation anti-reflective coating sequentially comprises a silicon oxide film, a first silicon nitride film, a second silicon nitride film and a third silicon nitride film from bottom to top, wherein the thickness of the silicon oxide film is 10-30nm, and the refractive index n1 is 1.3-1.6; the thickness of the first silicon nitride film is 8-15nm, and the refractive index n2 is 2.15-2.25; the thickness of the second silicon nitride film is 15-30nm, and the refractive index n3 is 2.05-2.15; the thickness of the third silicon nitride film is 30-50nm, and the refractive index is 1.9-2.0.

Multilayer passivation anti-reflective coating of crystalline silicon cell and manufacturing method thereof

The present invention discloses a paste composition for preparing a solar cell electrode, a solar cell electrode, and a solar cell wherein the paste composition comprises conductive powder, an organic carrier and glass powder. The glass powder contains 0.1 to 20 wt% of PbO, 30 to 60 wt% of Bi2O3, 1.0 to 15 wt% of TeO2 and 8 to 30 wt% of WO3, and the mass ratio of TeO2 to WO3 is 0.5: 1 to 1.75: 1. The solar cell electrode prepared through the use of the paste composition of the present invention has excellent adhesive strength and minimizes the series resistance (Rs), thereby providing high conversion efficiency.

Paste composition for preparing solar cell electrode, solar cell electrode and solar cell

The invention relates to a high-efficiency polycrystalline multilayer passivation anti-reflection film structure with high PID resistance. The structure is characterized in that a bottom SiNx layer, an intermediate SiNx layer, a single-or multi-optical optimization SiNx layer, and a top optical optimization SiOxNy layer are successively arranged on a positive surface of a polycrystalline silicon sheet substrate from bottom to top, wherein the refractive indexes of the layers decrease gradually. The total film thickness is 70 to 135nm and the total refractive index is 1.95 to 2.20. According to the invention, on the basis of the traditional polycrystalline silicon battery process, only the membranous structure of the passivation anti-reflection film is changed and compatibility with the traditional polycrystalline silicon battery process is realized; production can be carried out only by modifying the common etching equipment and PECVD equipment slightly; no special requirement is provided; and the structure can be realized easily and is suitable for large-scale production. And the structure also can be applied to some advanced battery processes like a back passivation battery, an N type dual-face battery, and an MWT battery and the like.

High-efficiency polycrystalline multilayer passivation anti-reflection film structure with high PID resistance

The invention discloses crystal silicon solar cell aluminum paste and a preparation method therefor. The preparation method comprises the steps of uniformly mixing raw materials with the specified weight percentages to obtain microcrystal glass powder with a specified mean particle size; then adding an organic solvent with the specified weight percentage into a container, adding organic resin with the specified weight percentage with stirring to perform processing, adding a surfactant to perform processing, and filtering to obtain an organic binder; and finally, according to a component ratio, mixing aluminum powder, the microcrystal glass powder, the organic binder and an additive to obtain the crystal silicon solar microcrystal glass aluminum paste containing the following components in percentage by weight: 0.5-5% of the microcrystal glass powder, 65-80% of the aluminum powder, 10-30% of the organic binder and 0.1-5% of the additive. According to the crystal silicon solar cell aluminum paste and the preparation method, the microcrystal glass powder is used, so that the adhesion force is greatly increased when a silicon wafer is reversely plated, the warping degree is relatively low, and the appearance condition is still kept; and the paste has the advantages of no aluminum bead, no bulge and the like during sintering at a relatively high temperature.

Crystal silicon solar cell aluminum paste and preparation method therefor

The invention discloses a three-layered silicon nitride antireflective film of a crystalline silicon solar cell. The three-layered silicon nitride antireflective film is characterized in that the antireflective film is composed of three silicon nitride film layers, wherein the first silicon nitride film is formed on the surface of the crystalline silicon of the solar cell, and has a thickness of 8 to 12nm and a refractive index of 2.3 to 2.4; the second silicon nitride film has a thickness of 18 to 24nm and a refractive index of 2.0 to 2.1; and the third silicon nitride film has a thickness of 35 to 45nm and a refractive index of 1.9 to 2.0. The invention also provides a method for preparing the three-layered silicon nitride antireflective film of the crystalline silicon solar cell. The method comprises coating three silicon nitride films with different refractive indexes and thickness on a silicon wafer by plasma enhanced chemical vapor deposition using silane and ammonia gas as raw materials and adopting new process parameters, and the method has low requirement for equipment and is easy to realize. The film coating process can enhance the passivation effect of the film and reduce the reflectivity of the antireflective film, thereby improving conversion efficiency of the solar cell. The three-layered silicon nitride antireflective film provided by the invention can improve the photoelectric conversion efficiency by 0.2% to 0.3% in comparison with a single-layer antireflective film system.

Three-layered silicon nitride antireflective film of crystalline silicon solar cell and preparation method thereof

The invention discloses a method for efficiently passivating back side of a crystalline silicon solar cell. The method is characterized by comprising the following steps of: (1) reversely inserting etched silicon chip into a PECVD (plasma enhanced chemical vapor deposition) graphite boat, and feeding to a PECVD furnace tube; (2) vacuumizing the furnace tube; (3) pre-processing the furnace tube; (4) testing the pressure; (5) depositing a first silicon oxynitride film, wherein the temperature is 460 DEG C; the ammonia flow is 2.5-3.8slm; the silicane flow is 1100-1800sccm; the nitrous oxide flow is 500-800sccm; the radio-frequency power is 6000W, and the lasting time is 2-5min; (6) blowing by 5slm of nitrogen for 30 seconds; vacuumizing to 80mTorr, and depositing a second silicon nitride film, wherein the temperature is 465 DEG C; the ammonia flow is 5-8slm; the silicane flow is 700-950sccm; the radio-frequency power is 6000W, and the lasting time is 3min, and (7) blowing and cooling by the nitrogen. The back passivation device disclosed by the invention can be finished by arbitrarily coating an antireflective film by a production line. Therefore, extra equipment costs are not increased; reflection of the light in the internal part is increased after a smooth dielectric film is coated on the back side; loss of the light is reduced, and short-circuit current of the cell is improved.

Method for efficiently passivating back side of crystalline silicon solar cell

The invention discloses a preparation method of a back polished silicon chip. The preparation method of the back polished silicon chip is characterized by comprising the following steps: cleaning surface phosphate glass of the diffused silicon chip with mixed solution of hydrofluoric acid and nitric acid, etching the back with the mixed solution of hydrofluoric acid, nitric acid and sulphuric acid after finishing cleaning to exert a polishing effect; then cleaning porous silicon produced from the reaction with sodium hydroxide solution, neutralizing alkaline liquor with the hydrofluoric acid; finally cleaning the surface of the silicon chip with pure water, and drying with hot air. According to the back polished silicon chip fabricated by the method disclosed by the invention, the battery light absorption is improved, the battery conversion efficiency is improved, and the production cost is reduced.

Preparation method of back polished silicon chip

The invention discloses a method for preparing SiOx-SiNx laminated films of a crystal silicon solar cell. The method comprises the step of coating an antireflective film on crystalline silicon glass after the processes of cleaning, making herbs into wool, diffusing by phosphorus, etching by plasma, and removing phosphorosilicate glass. The method is characterized in that the SiOx-SiNx laminated films are deposited at two surfaces of a silicon chip by a plasma-enhanced chemical vapor deposition method. The SiOx-SiNx laminated films are deposited at the upper surface and the lower surface of the silicon chip. The SiOx-SiNx laminated films are adopted as antireflection passivating films of an emitter of the solar cell. Therefore, the defects of poor adhesive ability of the silicon chip, large structure interface stress and high interface state density when silicon nitride is directly deposited on the silicon chip are overcome, and the passivating effect is also improved.

Method for preparing SiOx-SiNx laminated films of crystal silicon solar cell

The invention discloses a preparation method for a silicon dioxide film of a selective emitter battery piece, which comprises the following steps: (1), a silicon wafer is soaked into silicon wafer nitric acid solution, the concentration of nitric acid is 65-70%, the soaking time is 3-5min, the soaking temperature is 8 DEG C constantly, silicon dioxide is generated on the surface of the silicon wafer due to the oxidability of the nitric acid, meanwhile, nitrogen oxides (by-products in the reaction) are combined with water to generate nitrous acid which has strong oxidability, and finally, a dense silicon dioxide layer is formed on the surface of the silicon wafer; (2), the battery piece soaked in the step (1) is washed by fresh water for 2min; and (3), the battery piece washed in the step (2) is put into a hot oven to be baked, the baking temperature is 80 DEG C constantly, the baking time is 4-8min, so as to obtain the silicon dioxide film of the battery piece. The silicon dioxide film is simple in manufacturing method, good in compactness and low in manufacturing cost, and the reaction can be controlled easily, so as to provide the shorter manufacturing period for the production of high-efficiency selective emitter batteries prepared by a mask method.

Preparation method for silicon dioxide film of selective emitter battery piece

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