Cong Ye
Hubei University
29 Papers
96 Citations
Cong Ye is an academic researcher from Hubei University. The author has contributed to research in topics: Thin film & Annealing (metallurgy). The author has an hindex of 13, co-authored 29 publications.
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Papers
Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review
TL;DR: In this article, the authors have summarized the mechanism and performance of metal oxide based resistive switching memory, which considers the migration of metallic cations and oxygen vacancies, as well as discuss two main mechanisms including the electrochemical metallization effect and valence change memory effect (VCM).
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An efficient photoanode consisting of TiO2 nanoparticle-filled TiO2 nanotube arrays for dye sensitized solar cells
TL;DR: In this article, an efficient photoanode consisting of TiO 2 nanoparticles of proper particle size ∼20nm into TNT arrays is prepared by a sol-gel process through hydrolysis and condensation of titaniumtetrachloride in an aqueous medium containing alcohol and ammonia.
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High-performance ultraviolet-visible tunable perovskite photodetector based on solar cell structure
TL;DR: In this article, an ultraviolet (UV)-visible tunable photodetector based on ZnO nanorod arrays (NAs)/perovskite heterojunction solar cell structures is presented, in which the NAs are prepared using the hydrothermal method and annealed in different atmospheres.
Composition dependence of band alignment and dielectric constant for Hf1−xTixO2 thin films on Si (100)
TL;DR: In this article, composition-dependent band alignment and dielectric constant for Hf1−xTixO2 thin films on Si (100) have been investigated and it was found with increasing Ti content, the band gap and band offsets (ΔEv and ΔEc) of Hf 1−xTsO2 films against Si all decrease and the optimal Ti content in the films should be no higher than 21%, at which ΔEc is 1.06 eV.
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Resistive switching performance improvement of InGaZnO-based memory device by nitrogen plasma treatment
TL;DR: In this article, a hole structure IGZO-based memory device was fabricated and the resistive switching behavior was investigated and it was deduced that the N atoms of the inserting layer can influence the random formation of oxygen vacancy type conducting filaments, which results in more stable and uniform performance.
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