Cong Xiong
Chinese Academy of Sciences
27 Papers
67 Citations
Cong Xiong is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Layer (electronics) & Laser. The author has an hindex of 5, co-authored 23 publications.
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Papers
Design and realization of 3D printed fiber-tip microcantilever beam probes applied to hydrogen sensing
Changrui Liao,Cong Xiong,Jinlai Zhao,Mengqiang Zou,Yuanyuan Zhao,Bozhe Li,Peng Ji,Zhihao Cai,Zongsong Gan,Yiping Wang +9 more
TL;DR: In this paper , Rectangular solid, rectangular hollow, and triangular microcantilevers were fabricated on an optical fiber tip via two-photon polymerization, and the mechanical properties were characterized using finite element simulations.
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A Wearable Breath Sensor Based on Fiber-Tip Microcantilever
Cong Zhao,Dan Li,Zhihao Cai,Bin Du,Mengqiang Zou,Shuo Tang,Bozhe Li,Cong Xiong,Pengge Ji,Lichao Zhang,Yu Gong,Gaixia Xu,Changrui Liao,Yiping Wang +13 more
TL;DR: In this paper , an all-fiber-optic wearable breath sensor based on a fiber-tip microcantilever was proposed to provide an electromagnetically-immune breath-sensing system.
Patent
Preparation method of flexible mask plate
Qiong Qi,Cong Xiong,Suping Liu,Xiaoyu Ma +3 more
- 24 Oct 2012
TL;DR: In this paper, a method consisting of growing a SiO2 layer on a substrate, precipitating a polymer layer on the SiO 2 layer, forming hollow mask patterns on the polymer layer, immersing the substrate of the polymeric layer containing the hollow mask pattern into a mixed solution containing hydrofluoric acid and ammonium fluoride, and reacting the Si O2 layer with the mixed solution to peel the polymers from the substrate, so as to form a flexible mask plate.
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Patent
Method for passivating cavity surface of GaAs-based semiconductor laser
Like Hu,Suping Liu,Xiaoyu Ma,Qiong Qi,Guan Wang,Cong Xiong +5 more
- 01 Sep 2010
TL;DR: In this paper, a method for passivating a cavity surface of a GaAs-based semiconductor laser is described, and the method comprises the following steps of putting a cleaved laser bar into solution of sulphuret of ammonia to be immersed, carrying out passivation on the laser bar and depositing a sulfur passivation layer on a front cavity surface and a back cavity surface.
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Patent
Light trap adopted epitaxial material structure of ultrafine divergent angle high-power semiconductor laser
Wang Jun,Yiming Bai,Feng Chong,Cong Xiong,Li Zhong,Lin Han,Cuiluan Wang,Xiaoming Feng,Yuanyuan Liu,Suping Liu,Xiaoyu Ma +10 more
- 28 Sep 2011
TL;DR: In this paper, a light trap adopted epitaxial material structure of an ultrafine divergent angle high-power semiconductor laser is described, which comprises a substrate, a buffer layer, an N-type lower limiting layer and an electrode contact layer.
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