NO2 is an oxidizing gas, which is considered to be the most dangerous and most toxic gas that should be controlled. Because of the advantages of high sensitivity, selectivity, stability and fast response/recovery speed, the chemical resistance sensor is used as a NO2 gas sensor. This article reviews the NO2 gas sensor based on metal oxides. Firstly, the hazards of NO2 and the major disadvantages of chemiresistive sensors based on metal oxides were discussed. Then, different sensitive materials of chemical resistance sensors were discussed, including metal oxides (MO), conductive polymers and carbon-based materials. Finally, the NO2 gas sensors based on metal oxide (including ZnO, NiO, CuO, SnO2, WO3) were discussed from the aspects of morphology, preparation method, modification, doping and composite. 

Metal Oxide Gas Sensors For Detecting NO2 in Industrial Exhaust Gas: Recent Developments

ZnO hierarchical microsphere for enhanced photocatalytic activity

Dielectric composites have drawn increasing attention owing to their wide applications in electrical systems. Herein, a novel design of dielectric composites consisting of core-shell structured porous Ni@BaTiO3 scaffolds infiltrated with epoxy was developed. It is demonstrated that the dielectric constants of the composites could be as high as 6397@10 kHz, which is approximately 1777 times higher than pure epoxy matrix (er ≈ 3.6@10 kHz). Meanwhile, the dielectric loss (tanδ ≈ 0.04@10 kHz) remains comparable to that of pure epoxy (tanδ ≈ 0.01@10 kHz). It is believed that the strong charge accumulation and interfacial polarizations on the huge interfaces, especially the Ni/BaTiO3 and Ni/epoxy interfaces, give arise to the substantially enhanced er. Besides, the sintered insulating BaTiO3 coating can block the transportation of charge carriers, resulting in the low loss. The ultrahigh dielectric constants and low loss make these composites promising candidates for microstrip antennas, field-effect transistors and dielectric capacitors.

Fabrication of core-shell structured Ni@BaTiO3 scaffolds for polymer composites with ultrahigh dielectric constant and low loss

Emerging nanotechnologies show unprecedented advantages in accelerating cancer theranostics. Among them, two-dimensional nanomaterials (2DNMs) represent a novel type of material with versatile physicochemical properties that have enabled a new horizon for applications in both cancer diagnosis and therapy. Studies have demonstrated that 2DNMs may be used in diverse aspects, including i) cancer detection due to their high propensity towards tumor markers; ii) molecular imaging for guided tumor therapies, and iii) drug and gene loading, photothermal and photodynamic cancer therapies. However, their biomedical applications raise concerns due to the limited understanding of their in vivo metabolism, transformation and possible toxicities. In this comprehensive review, the state-of-the-art development of 2DNMs and their implications for cancer nanotheranostics are presented. The modification strategies to enhance the biocompatibility of 2DNMs are also reviewed.

Two-Dimensional Nanomaterials for Cancer Nanotheranostics.

The paper reports manufacturing of a multi-layer graphene embedded composite of aluminium alloys by direct exfoliation of graphite into graphene with the help of Friction Stir Alloying (FSA). The formation of this nano composite and optimization of the process parameters led to an approximately two-fold increase in the strength, without loss in ductility, due to the dispersion of the graphene in aluminium. The manufacturing process is scalable and cost effective as it uses graphite powder and aluminium sheets as the raw materials. The presence of graphene layers in the metal matrix was confirmed using Raman spectroscopy as well as TEM. The graphene sheet thickness was measured using AFM after extracting it from the composite. Molecular dynamic simulation results reveal the evolution of newer structures and defects that have resulted in the enhanced properties of the nano-composite. These findings open up newer possibilities toward efficient and scalable manufacturing of high strength high-ductility metal matrix based graphene nano-composites.

Multi-layer graphene reinforced aluminum –manufacturing of high strength composite by friction stir alloying

This paper employs the Heyd-Scuseria-Ernzerhof (HSE) function to research electronic structures of monolayer InxAl1-xN with different compositions (x = 0, 0.25, 0.5, 0.75, 1) based on the first-principles, and the optical properties of single-layer InxAl1-xN are calculated by Generalized Gradient Approximation-Perdew Burke Ernzerhof (GGA-PBE) function. The influence of the electronic structure on the properties has been analyzed. Then the influence of doping quantity on the characteristics has been summarized, which also indicates the trend of the complex dielectric function and absorption spectrum. The calculation results show that with the increase of x, the static dielectric constant increases, the electron transition ability increases, and the absorption peak intensity in the light absorption spectrum increases. It can conclude that the InxAl1-xN compound can theoretically achieve the adjustable Eg and photoelectric performance with x, which will apply in making various optoelectronic devices, including solar cells and sensors.

/pdf/first-principles-calculations-of-the-electronic-structure-5kinkcri.pdf

First-principles Calculations of the Electronic Structure and Optical Properties of Graphene-like InxAl1-xN Monolayers

The invention provides a preparation method for a petal-shaped film Zn-Al type gas sensitive material. The prepared gas sensitive material is a uniform film composed of multiple nano-sheets in a staggered mode, the nano-sheets are smooth and flat and dozens of nanometers thick, and the diameter of each nano-sheet is about one micrometer; a nano-petal-shaped structure is formed on the surface of each nano-sheet layer, the specific surface area is large, the gas sensitive material has the gas sensitive characteristic to ethyl alcohol, methyl alcohol and acetone, and compared with a pure ZnO film material, the stability is higher; and the prepared film gas sensitive material directly grows on a substrate, and thus a prepared sample is higher in mechanical strength and not prone to falling off.

Preparation method for petal-shaped film Zn-Al type gas sensitive material

The invention discloses a method for synthesizing a silicon nitride nanorod crystalline semiconductor material at low temperature by a solvothermal method, which comprises the following steps of: adding silica fume, sodium azide and iodine into a high-pressure reaction kettle according to the mass ratio of 0.3:3:8, and evenly stirring with a glass rod; sealing the reaction kettle and then putting the reaction kettle in an oven, and heating to 200-250 DEG C, keeping heating for 15 hours at 200-250 DEG C, and then naturally cooling to the room temperature, and collecting a product after the reaction; washing the collected product with anhydrous ethanol, deionized water, a HNO3 and HF mixture and distilled water in sequence; and finally, dehydrating the product with anhydrous ethanol to obtain the silicon nitride nanorod crystalline semiconductor material. The silicon nitride nanorod crystal with the diameter of 100nm, high purity and good quality can be prepared by the method, and the method uses simple experimental devices and is convenient to operate; and the method provided by the invention has low requirements on the control of growth parameters and the like, and is convenient for the industrial mass production.

Method for synthesizing silicon nitride nanorod crystalline material at low temperature by solvothermal method

Enhanced Visible Light Photocatalytic Performance of Microspheres Biobr/Bioi Heterojunctions

The memristor holds significant promise as a key electronic element in neuromorphic computing, enabling synaptic functionalities. Consequently, synthesizing memristors with innovative structures holds immense practical value. In this study, we successfully fabricated a novel memristor with an Au/tin selenide (SnSe)/ITO configuration, utilizing a straightforward hydrothermal and sputtering approach. This marks the inaugural instance of such a fabrication technique. We further optimized the memristor's performance by minimizing the thickness of the switching layer, ensuring robust memristive behavior even after 80 cycles and 2700 seconds. Additionally, we delved into the four primary conduction mechanisms of the proposed device. This work not only enhances our comprehension of SnSe memristors with unique structures but also lays a foundation for the development of efficient and stable hydrothermal-synthesized memristive devices. 

Novel memristor with Au/SnSe/ITO structure: First fabrication via a hydrothermal and sputtering approach

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