Christos G. Takoudis
University of Illinois at Chicago
233 Papers
1.8K Citations
Christos G. Takoudis is an academic researcher from University of Illinois at Chicago. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 36, co-authored 224 publications. Previous affiliations of Christos G. Takoudis include University of Illinois at Urbana–Champaign & Purdue University.
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Papers
Bifurcations due to an auto-catalytic reaction in a cstr
R. Ravi,Christos G. Takoudis +1 more
TL;DR: In this article, the stable state bifurcation in an isothermal CSTR with the reactions A→B, B→l (the first one being auto-catalytic) taking place in it, has been studied recently using the singularity theory based formulation of Golubitsky and Schaeffer.
P‐42: Metal Patterning on Flexible Substrates Suitable for Roll‐to‐Roll Processes
Dong-Un Jin,Abhijit Roy Chowdhuri,Christos G. Takoudis,Jie Zhang,Daniel R. Gamota +4 more
- 01 May 2003
TL;DR: In this article, a low-cost patterning technique suitable for high volume manufacturing of thin film transistors is proposed, which utilizes photolithographic templates and electroless plating to generate high-resolution metal patterns on flexible substrates.
Si0.85Ge0.15 oxynitridation in wet-nitric oxide ambient
TL;DR: In this article, an angle-resolved XPSE analysis suggests that wet-oxynitridation at temperatures higher than 600 oC volatilizes some germanium oxide from the surface region, while silicon monoxide is outgassed from the dielectric bulk and accumulates near the surface.
Experimental and Theoretical Studies of the Si(100)/SiO2 Interface Formed by Wet and Dry Oxidation
TL;DR: In this article, a method to isolate the contributions of strain and suboxide content towards the observed shifts is proposed, which utilizes simple optical model and effective medium approximation, allows estimation of the average strain and Suboxide concentration in films of different thickness.
Metalorganic chemical vapor deposition of aluminum oxide on silicon nitride
TL;DR: In this paper, thin films of aluminum oxide were deposited on silicon nitride thin films using trimethylaluminum and oxygen at 0.5 Torr and 300 °C, and Fourier transform infrared (FTIR) and x-ray photoelectron spectroscopic (XPS) analyses of these films showed no aluminum silicate phase at the film-substrate interface.