The interaction of energetic ions with solids results in energy loss to both atomic nuclei and electrons in the solid. In this article, recent advances in understanding and modeling the additive and competitive effects of nuclear and electronic energy loss on the response of materials to ion irradiation are reviewed. Experimental methods and large-scale atomistic simulations are used to study the separate and combined effects of nuclear and electronic energy loss on ion beam modification of materials. The results demonstrate that nuclear and electronic energy loss can lead to additive effects on irradiation damage production in some materials; while in other materials, the competitive effects of electronic energy loss leads to recovery of damage induced by elastic collision cascades. These results have significant implications for ion beam modification of materials, non-thermal recovery of ion implantation damage, and the response of materials to extreme radiation environments.

/pdf/the-role-of-electronic-energy-loss-in-ion-beam-modification-3jqv0iz2i5.pdf

The role of electronic energy loss in ion beam modification of materials

Polycrystalline Al2O3, magnesium aluminate spinel (MgAl2O4), MgO, Si3N4, and SiC were irradiated with various ions at 200-450 K, and microstructures were examined following irradiation using cross-section TEM. Amorphization was not observed in any of the irradiated oxide ceramics, despsite damage energy densities up to {similar_to}7 keV/atom (70 displacements per atom). On the other hand, SiC readily amorphized after damage levels of {similar_to}0.4 dpa at room temperature (RT). Si3N4 exhibited intermediate behavior; irradiation with Fe{sup 2+} ions at RT produced amorphization in the implanted ion region after damage levels of {similar_to}1 dpa. However, irradiated regions outside the implanted ion region did not amorphize even after damage levels > 5 dpa. The amorphous layer in the Fe-implanted region of Si3N4 did not appear if the specimen was simultaneoulsy irradiated with 1-MeV He{sup +} ions at RT. By comparison with published results, it is concluded that the implantation of certain chemical species has a pronounced effect on the amorphization threshold dose of all five materials. Intense ionizing radiation inhibits amorphization in Si3N4, but does not appear to significantly influence the amorphization of SiC.

/pdf/influence-of-irradiation-spectrum-and-implanted-ions-on-the-42wfekx41q.pdf

Influence of irradiation spectrum and implanted ions on the amorphization of ceramics

A long-standing objective in materials research is to effectively heal fabrication defects or to remove pre-existing or environmentally induced damage in materials. Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power and high-frequency applications. Its high corrosion and radiation resistance makes it a key refractory/structural material with great potential for extremely harsh radiation environments. Here we show that the energy transferred to the electron system of SiC by energetic ions via inelastic ionization can effectively anneal pre-existing defects and restore the structural order. The threshold determined for this recovery process reveals that it can be activated by 750 and 850 keV Si and C self-ions, respectively. The results conveyed here can contribute to SiC-based device fabrication by providing a room-temperature approach to repair atomic lattice structures, and to SiC performance prediction as either a functional material for device applications or a structural material for high-radiation environments.

/pdf/ionization-induced-annealing-of-pre-existing-defects-in-2r1vi18xrw.pdf

Ionization-induced annealing of pre-existing defects in silicon carbide

Point defect evolution in Ni, NiFe and NiCr alloys from atomistic simulations and irradiation experiments

Definitions and basic properties of the Voronoi diagram generalizations of the Voronoi diagram algorithms for computing Voronoi diagrams poisson Voronoi diagrams spatial interpolation models of spatial processes point pattern analysis locational optimization through Voronoi diagrams.

Spatial tessellations. Concepts and Applications of Voronoi diagrams

Grain growth of nanocrystalline materials is generally thermally activated, but can also be driven by irradiation at much lower temperature. In nanocrystalline ceria and zirconia, energetic ions deposit their energy to both atomic nuclei and electrons. Our experimental results have shown that irradiation-induced grain growth is dependent on the total energy deposited, where electronic energy loss and elastic collisions between atomic nuclei both contribute to the production of disorder and grain growth. Our atomistic simulations reveal that a high density of disorder near grain boundaries leads to locally rapid grain movement. The additive effect from both electronic excitation and atomic collision cascades on grain growth demonstrated in this work opens up new possibilities for controlling grain sizes to improve functionality of nanocrystalline materials.

The effect of electronic energy loss on irradiation-induced grain growth in nanocrystalline oxides

Understanding energy dissipation processes in electronic/atomic subsystems and subsequent non-equilibrium defect evolution is a long-standing challenge in materials science. In the intermediate energy regime, energetic particles simultaneously deposit a significant amount of energy to both electronic and atomic subsystems of silicon carbide (SiC). Here we show that defect evolution in SiC closely depends on the electronic-to-nuclear energy loss ratio (Se/Sn), nuclear stopping powers (dE/dxnucl), electronic stopping powers (dE/dxele), and the temporal and spatial coupling of electronic and atomic subsystem for energy dissipation. The integrated experiments and simulations reveal that: (1) increasing Se/Sn slows damage accumulation; (2) the transient temperatures during the ionization-induced thermal spike increase with dE/dxele, which causes efficient damage annealing along the ion trajectory; and (3) for more condensed displacement damage within the thermal spike, damage production is suppressed due to the coupled electronic and atomic dynamics. Ionization effects are expected to be more significant in materials with covalent/ionic bonding involving predominantly well-localized electrons. Insights into the complex electronic and atomic correlations may pave the way to better control and predict SiC response to extreme energy deposition.

Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation

The behavior of ions traveling through a material is of great interest to many fields. For instance, radiation damage in nuclear materials and ion beam modification of materials are most concerned with understanding the formation and evolution of defects along the ion path (Was 2016). Some of the important properties that can be gleaned from investigating the initial damage from the ion include: numbers of interstitials and vacancies produced, energy deposited per unit length to electrons and atomic nuclei, track diameter, and implanted ion profile. These properties enable further simulations and allow computing a common unit of radiation damage dose, displacements per atom (dpa), which can be used to compare irradiation experiments with different ions (Backman et al. 2013) (Stoller et al. 2013). Additionally, the ejection of materials near the surface due to incident ions is important to sputtering and ion-beam analysis techniques, such as elastic recoil detection analysis (ERDA) and secondary ion mass spectrometry (SIMS) (Vickerman and Gilmore 2011). The interaction of ions within a material can be broken into two parts: electronic and nuclear stopping. Electronic stopping is the energy lost from the ion due to inelastic collisions with electrons along its path. Nuclear stopping is the energy lost due to elastic collisions between the ion and atomic nuclei within the material.

/pdf/pysrim-automation-analysis-and-plotting-of-srim-calculations-2doy2t5lkv.pdf

pysrim: Automation, Analysis, and Plotting of SRIM Calculations

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The effect of electronic energy loss on irradiation-induced grain growth in nanocrystalline oxides

Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation

pysrim: Automation, Analysis, and Plotting of SRIM Calculations