An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.

Method and apparatus for angular-resolved spectroscopic lithography characterization

Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. An imaging optical system is used to measure a plurality of measured optical signals from a plurality of periodic targets on the sample. The targets each have a first structure in a first layer and a second structure in a second layer. There are predefined offsets between the first and second structures. A scatterometry overlay technique is then used to analyze the measured optical signals of the periodic targets and the predefined offsets of the first and second structures of the periodic targets to thereby determine an overlay error between the first and second structures of the periodic targets.

Apparatus and methods for detecting overlay errors using scatterometry

Methods and systems for determining a critical dimension and overlay of a specimen

The simultaneous measurement of four separately polarized beams upon diffraction from a substrate is used to determine properties of the substrate. Circularly or elliptically polarized light sources are passed via up to three polarizing elements. This polarizes the light sources by 0, 45, 90 and 135°. The plurality of polarizing beamsplitters replaces the use of a phase modulator, but enables the measurement of the intensity of all four beams and thus the measurement of the phase modulation and amplitude of the combined beams to give the features of the substrate.

Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method

Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

Methods and systems for lithography process control

A method of and apparatus for measuring line profile asymmetries in microelectronic devices comprising directing light at an array of microelectronic features of a microelectronic device, detecting light scattered back from the array comprising either or both of one or more angles of reflection and one or more wavelenghts, and comparing one or more characteristics of the back-scattered light by examining data from complementary angles of reflection or performing a model comparison.

Line profile asymmetry measurement using scatterometry

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Line profile asymmetry measurement using scatterometry