Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

A faceplate for a showerhead of a semiconductor wafer processing system is provided. The faceplate has a plurality of gas passageways to provide a plurality of gases to the process region without commingling those gases before they reach the processing region within a reaction chamber. The showerhead includes a faceplate and a gas distribution manifold assembly. The faceplate defines a plurality of first gas holes that carry a first gas from the manifold assembly through the faceplate to the process region, and a plurality of channels that couple a plurality of second gas holes to a radial plenum that receives the second gas from the manifold assembly. The faceplate and the manifold assembly are each fabricated from a substantially solid nickel material.

Dual gas faceplate for a showerhead in a semiconductor wafer processing system

A processing system and method for chemical oxide removal (COR), wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

Processing system and method for treating a substrate

In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit.

Apparatus and method for hybrid chemical processing

A substrate cleaning chamber (24) comprises various components, such as for example, a consumable ceramic liner (10), substrate heating pedestal (80), and process kit (114). The consumable ceramic liner (60) is provided for connecting a gas outlet channel (62) of a remote gas energizer (52) to a gas inlet channel (40) of a substrate cleaning chamber (24). The substrate heating pedestal (80) comprises an annular plate (82) having a substrate receiving surface (84) with a plurality of ceramic balls (90) positioned in an array of recesses (88). A process kit (114) comprises a top plate (116), top liner(118), gas distributor plate (120), bottom liner (122), and focus ring (124).

Substrate cleaning chamber and components

The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.

Vaporization and deposition apparatus and process

Vaporization and deposition apparatus

PROBLEM TO BE SOLVED: To deliver liquid precursors to a vaporizer, to efficiently vaporize the precursors, to deliver the vaporized precursors to a surface of a substrate, to exhaust an apparatus while maintaining elevated temperature in a chamber, to prevent unwanted condensation or decomposition of the precursors along a pathway and to avoid temperature gradients in the apparatus.SOLUTION: The invention relates to an apparatus and a method for vaporizing liquid precursors and depositing a film on a suitable substrate. Particularly, an apparatus and a method deposit a metal-oxide film, such as barium oxide, strontium oxide, and titanium oxide (BST) films, on a silicon wafer to manufacture integrated circuit capacitors useful in high capacity dynamic memory modules.

Vaporization and deposition apparatus and method

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Vaporization and deposition apparatus and process

Vaporization and deposition apparatus

Vaporization and deposition apparatus and method