An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.

System and method for lithography simulation

A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

Method of forming insulation film by modified PEALD

A method and apparatus for gas control is provided. The apparatus may be used for controlling gases delivered to a chamber, controlling the chamber pressure, controlling the delivery of backside gas between a substrate and substrate support and the like. In one embodiment, an apparatus for controlling gas control includes at least a first flow sensor having a control valve, a first pressure sensor and at least a second pressure sensor. An inlet of the first flow sensor is adapted for coupling to a gas supply. A control valve is coupled to an outlet of the flow sensor. The first pressure sensor is adapted to sense a metric indicative of the pressure upstream of the first flow sensor. The second pressure sensor is adapted to sense a metric indicative of the pressure downstream of the control valve.

Method and apparatus for substrate temperature control

The disclosure pertains to a space-conserving integrated fluid delivery system which is particularly useful for gas distribution in semiconductor processing equipment. The present invention also pertains to an integrated fluid flow network architecture, which may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded, and the various fluid handling and monitoring components may be partially integrated or fully integrated into the substrate, depending on design and material requirements.

Micromachined integrated fluid delivery system with dynamic metal seat valve and other components

The present invention provides apparatus and method for controlling mix ratio of gas supplied to a processing chamber integrated with chamber pressure. In one embodiment, an integrated controller is used to adjust mix ratio and chamber pressure. In one embodiment, the mix ratio and chamber pressure may be adjusted using a flow sensor and a control valve disposed in each gas supply line. In one embodiment, the flow sensor used in each gas supply line is insensitive to upstream pressure perturbations.

Method and apparatus for pressure and mix ratio control

A space-conserving integrated fluid delivery system which is particularly useful for gas distribution in semiconductor processing equipment. The invention pertains to a diffusion bonded integrated fluid flow network architecture, which includes, in addition to a layered substrate containing fluid flow channels, an in-line filter and may include various fluid handling and monitoring components. The integrated fluid delivery system that is formed from a layered substrate is diffusion bonded, and the various fluid handling and monitoring components may be partially integrated or fully integrated into the substrate, depending on design and material requirements.

In-line filter in a diffusion bonded layered substrate

Method and apparatus for pressure control and flow measurement

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