Chongxin Shan
Zhengzhou University
418 Papers
1.6K Citations
Chongxin Shan is an academic researcher from Zhengzhou University. The author has contributed to research in topics: Photodetector & Medicine. The author has an hindex of 51, co-authored 325 publications. Previous affiliations of Chongxin Shan include University of Nottingham & Chinese Academy of Sciences.
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Papers
Carbon Nanodots with Nearly Unity Fluorescent Efficiency Realized via Localized Excitons
Qing Lou,Qingchao Ni,Chun-Yao Niu,Jian-Yong Wei,Zhuangfei Zhang,Weixia Shen,Cheng-Long Shen,Chaochao Qin,Guangsong Zheng,Kai-Kai Liu,Jinhao Zang,Lin Dong,Chongxin Shan +12 more
TL;DR: Researchers achieve nearly unity fluorescent efficiency in carbon nanodots by harnessing localized excitons, a breakthrough that enhances their luminescent properties, with implications for optoelectronic applications and fundamental understanding of quantum confinement effects.
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MOVPE growth of ZnSe films on ZnO/Si templates
Xiuzhen Wang,Xiuzhen Wang,Xizhi Fan,Chongxin Shan,Zhifeng Zhang,Jiahe Zhang,Yegang Lu,Yongshun Liu,Dezhen Shen,Yan-Kuin Su,Shoou-Jinn Chang +10 more
TL;DR: In this article, the growth and characterization of ZnSe films prepared on ZnO/Si(1.1) templates were reported, and it was found that the as-deposited films are highly oriented with zinc blende structure.
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Hybrid 2D/3D graphitic carbon nitride‐based high‐temperature position‐sensitive detector
Xuexia Chen,Dongwen Yang,Xun Yang,Qing Lou,Zhi-Yu Liu,Yancheng Chen,Chao-Fan Lv,Lin Dong,Chongxin Shan +8 more
TL;DR: In this article , a 2D/3D graphitic carbon nitride (g-C3N4)/gallium nitride hybrid heterojunction was designed to construct the ultraviolet high-temperature-resistant PSD.
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Plasma Treatments and Light Extraction from Fluorinated CVD-Grown (400) Single Crystal Diamond Nanopillars
Mariusz Radtke,Abdallah Slablab,Sandra Van Vlierberghe,Chao-Nan Lin,Ying-Jie Lu,Chongxin Shan +5 more
- 03 Jun 2020
TL;DR: In this paper, the possibility of light extraction from single crystal diamond nanopillars was investigated by dedicated 519 nm laser-induced spin-state initiation of negatively charged nitrogen vacancies (NV−).
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